JPS5235582A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5235582A
JPS5235582A JP50111211A JP11121175A JPS5235582A JP S5235582 A JPS5235582 A JP S5235582A JP 50111211 A JP50111211 A JP 50111211A JP 11121175 A JP11121175 A JP 11121175A JP S5235582 A JPS5235582 A JP S5235582A
Authority
JP
Japan
Prior art keywords
transistor
frequency
well
made small
ion injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50111211A
Other languages
Japanese (ja)
Inventor
Shoichi Shimizu
Hisashi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50111211A priority Critical patent/JPS5235582A/en
Publication of JPS5235582A publication Critical patent/JPS5235582A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: The impurity density peak is formed by ion injection, so that the base duration is made small as well as a transistor of high cut-off frequency can be obtained.
COPYRIGHT: (C)1977,JPO&Japio
JP50111211A 1975-09-13 1975-09-13 Transistor Pending JPS5235582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50111211A JPS5235582A (en) 1975-09-13 1975-09-13 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50111211A JPS5235582A (en) 1975-09-13 1975-09-13 Transistor

Publications (1)

Publication Number Publication Date
JPS5235582A true JPS5235582A (en) 1977-03-18

Family

ID=14555331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50111211A Pending JPS5235582A (en) 1975-09-13 1975-09-13 Transistor

Country Status (1)

Country Link
JP (1) JPS5235582A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127178A (en) * 1976-04-19 1977-10-25 Nippon Telegr & Teleph Corp <Ntt> Transistor
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same
JPS5598853A (en) * 1979-01-23 1980-07-28 Nec Corp Semiconductor device
JPS55124256A (en) * 1979-03-16 1980-09-25 Sony Corp Method of fabricating semiconductor integrated circuit
US6737721B1 (en) 1999-10-18 2004-05-18 Nec Electronics Corporation Shallow trench isolation structure for a bipolar transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127178A (en) * 1976-04-19 1977-10-25 Nippon Telegr & Teleph Corp <Ntt> Transistor
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same
JPS5598853A (en) * 1979-01-23 1980-07-28 Nec Corp Semiconductor device
JPS55124256A (en) * 1979-03-16 1980-09-25 Sony Corp Method of fabricating semiconductor integrated circuit
US6737721B1 (en) 1999-10-18 2004-05-18 Nec Electronics Corporation Shallow trench isolation structure for a bipolar transistor

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