JPS51134565A - Schottky barrier diode manufacturing process - Google Patents

Schottky barrier diode manufacturing process

Info

Publication number
JPS51134565A
JPS51134565A JP5901075A JP5901075A JPS51134565A JP S51134565 A JPS51134565 A JP S51134565A JP 5901075 A JP5901075 A JP 5901075A JP 5901075 A JP5901075 A JP 5901075A JP S51134565 A JPS51134565 A JP S51134565A
Authority
JP
Japan
Prior art keywords
schottky barrier
manufacturing process
barrier diode
diode manufacturing
distrigution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5901075A
Other languages
Japanese (ja)
Other versions
JPS5935188B2 (en
Inventor
Seiichi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5901075A priority Critical patent/JPS5935188B2/en
Publication of JPS51134565A publication Critical patent/JPS51134565A/en
Publication of JPS5935188B2 publication Critical patent/JPS5935188B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To provide an easier fabrication method of Schottky barrier diodes by utilizing the fact that ion pouring permits the impurity density distrigution to be equal to Gauss distribution.
COPYRIGHT: (C)1976,JPO&Japio
JP5901075A 1975-05-16 1975-05-16 Manufacturing method of shotgun barrier diode Expired JPS5935188B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5901075A JPS5935188B2 (en) 1975-05-16 1975-05-16 Manufacturing method of shotgun barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5901075A JPS5935188B2 (en) 1975-05-16 1975-05-16 Manufacturing method of shotgun barrier diode

Publications (2)

Publication Number Publication Date
JPS51134565A true JPS51134565A (en) 1976-11-22
JPS5935188B2 JPS5935188B2 (en) 1984-08-27

Family

ID=13100881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5901075A Expired JPS5935188B2 (en) 1975-05-16 1975-05-16 Manufacturing method of shotgun barrier diode

Country Status (1)

Country Link
JP (1) JPS5935188B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586166A (en) * 1978-12-20 1980-06-28 Ibm Schottky barrier diode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147682U (en) * 1985-03-05 1986-09-11

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586166A (en) * 1978-12-20 1980-06-28 Ibm Schottky barrier diode

Also Published As

Publication number Publication date
JPS5935188B2 (en) 1984-08-27

Similar Documents

Publication Publication Date Title
JPS53124087A (en) Manufacture of semiconductor device
JPS51134565A (en) Schottky barrier diode manufacturing process
JPS53142877A (en) Manufacture for compound semiconductor device
JPS51150986A (en) Fabrication method of semiconductor device
JPS5274280A (en) Semiconductor device and its production
JPS51146194A (en) Diode device fabrication method
JPS5245294A (en) Semiconductor device
JPS5211788A (en) Method of manufacturing p-n junction type solar battery
JPS53120263A (en) Manufacture of semiconductor device
JPS5329086A (en) Production of semiconductor device
JPS5227281A (en) Semiconductor manufacturing process
JPS5219081A (en) Production method of semiconductor device
JPS5410682A (en) Production of semiconductor elements
JPS53102669A (en) Manufacture for semiconductor device
JPS52179A (en) Method of fabricating semiconductor
JPS5382181A (en) Manufacture for semiconductor device
JPS5273673A (en) Production of semiconductor device
JPS51140559A (en) Impurities diffusing to iii-v group compound semi-conductor base plate
JPS528787A (en) Semiconductor device process
JPS524187A (en) P-n conjunction type solid element
JPS52141561A (en) Ion injection
JPS527673A (en) Method of forming pn junction
JPS51135381A (en) Semiconductor device and its manufacturing method
JPS5231682A (en) Production method of semiconductor device
JPS5214390A (en) Iii-v compound semiconductor device and its process for fabrication