JPS5231682A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS5231682A
JPS5231682A JP10697075A JP10697075A JPS5231682A JP S5231682 A JPS5231682 A JP S5231682A JP 10697075 A JP10697075 A JP 10697075A JP 10697075 A JP10697075 A JP 10697075A JP S5231682 A JPS5231682 A JP S5231682A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
enclose
film
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10697075A
Other languages
Japanese (ja)
Inventor
Toru Inaba
Katsuhiko Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10697075A priority Critical patent/JPS5231682A/en
Publication of JPS5231682A publication Critical patent/JPS5231682A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce a high withstand voltage bipolar IC, by means of forming a shape which enclose the semiconductor active region with insu ation film.
COPYRIGHT: (C)1977,JPO&Japio
JP10697075A 1975-09-05 1975-09-05 Production method of semiconductor device Pending JPS5231682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10697075A JPS5231682A (en) 1975-09-05 1975-09-05 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10697075A JPS5231682A (en) 1975-09-05 1975-09-05 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5231682A true JPS5231682A (en) 1977-03-10

Family

ID=14447154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10697075A Pending JPS5231682A (en) 1975-09-05 1975-09-05 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5231682A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688702A (en) * 1988-02-08 1997-11-18 Kabushiki Kaisha Toshiba Process of making a semiconductor device using a silicon-on-insulator substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939233A (en) * 1972-08-21 1974-04-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939233A (en) * 1972-08-21 1974-04-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688702A (en) * 1988-02-08 1997-11-18 Kabushiki Kaisha Toshiba Process of making a semiconductor device using a silicon-on-insulator substrate

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