JPS5231682A - Production method of semiconductor device - Google Patents
Production method of semiconductor deviceInfo
- Publication number
- JPS5231682A JPS5231682A JP10697075A JP10697075A JPS5231682A JP S5231682 A JPS5231682 A JP S5231682A JP 10697075 A JP10697075 A JP 10697075A JP 10697075 A JP10697075 A JP 10697075A JP S5231682 A JPS5231682 A JP S5231682A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production method
- enclose
- film
- produce
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To produce a high withstand voltage bipolar IC, by means of forming a shape which enclose the semiconductor active region with insu ation film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10697075A JPS5231682A (en) | 1975-09-05 | 1975-09-05 | Production method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10697075A JPS5231682A (en) | 1975-09-05 | 1975-09-05 | Production method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5231682A true JPS5231682A (en) | 1977-03-10 |
Family
ID=14447154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10697075A Pending JPS5231682A (en) | 1975-09-05 | 1975-09-05 | Production method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5231682A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688702A (en) * | 1988-02-08 | 1997-11-18 | Kabushiki Kaisha Toshiba | Process of making a semiconductor device using a silicon-on-insulator substrate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4939233A (en) * | 1972-08-21 | 1974-04-12 |
-
1975
- 1975-09-05 JP JP10697075A patent/JPS5231682A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4939233A (en) * | 1972-08-21 | 1974-04-12 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688702A (en) * | 1988-02-08 | 1997-11-18 | Kabushiki Kaisha Toshiba | Process of making a semiconductor device using a silicon-on-insulator substrate |
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