JPS51134566A - Semiconductor unit manufacturing process - Google Patents

Semiconductor unit manufacturing process

Info

Publication number
JPS51134566A
JPS51134566A JP5793575A JP5793575A JPS51134566A JP S51134566 A JPS51134566 A JP S51134566A JP 5793575 A JP5793575 A JP 5793575A JP 5793575 A JP5793575 A JP 5793575A JP S51134566 A JPS51134566 A JP S51134566A
Authority
JP
Japan
Prior art keywords
semiconductor unit
msi
shallow
damaging
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5793575A
Other languages
Japanese (ja)
Other versions
JPS557694B2 (en
Inventor
Katsuyuki Inayoshi
Hiroshi Takahashi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5793575A priority Critical patent/JPS557694B2/ja
Publication of JPS51134566A publication Critical patent/JPS51134566A/en
Publication of JPS557694B2 publication Critical patent/JPS557694B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To provide an ohmic electrode on a shallow P-N conjunction part of a MSI semi-conductor unit without damaging the layers.
COPYRIGHT: (C)1976,JPO&Japio
JP5793575A 1975-05-17 1975-05-17 Expired JPS557694B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5793575A JPS557694B2 (en) 1975-05-17 1975-05-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5793575A JPS557694B2 (en) 1975-05-17 1975-05-17

Publications (2)

Publication Number Publication Date
JPS51134566A true JPS51134566A (en) 1976-11-22
JPS557694B2 JPS557694B2 (en) 1980-02-27

Family

ID=13069865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5793575A Expired JPS557694B2 (en) 1975-05-17 1975-05-17

Country Status (1)

Country Link
JP (1) JPS557694B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPS5756927A (en) * 1981-07-28 1982-04-05 Hitachi Ltd Electrode structure for semiconductor device and manufacture thereof
JPS57208173A (en) * 1981-06-18 1982-12-21 Seiko Epson Corp Semiconductor integrated circuit device
JPS58183A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Manufacturing method for semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166678U (en) * 1981-04-14 1982-10-20

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4996684A (en) * 1973-01-16 1974-09-12
JPS4998578A (en) * 1973-01-22 1974-09-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4996684A (en) * 1973-01-16 1974-09-12
JPS4998578A (en) * 1973-01-22 1974-09-18

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPH0127589B2 (en) * 1978-11-29 1989-05-30 Nippon Electric Co
JPS57208173A (en) * 1981-06-18 1982-12-21 Seiko Epson Corp Semiconductor integrated circuit device
JPS58183A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Manufacturing method for semiconductor device
JPS5756927A (en) * 1981-07-28 1982-04-05 Hitachi Ltd Electrode structure for semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS557694B2 (en) 1980-02-27

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