JPS5383578A - Manufacture of full pressure welding type semiconductor device - Google Patents

Manufacture of full pressure welding type semiconductor device

Info

Publication number
JPS5383578A
JPS5383578A JP15813576A JP15813576A JPS5383578A JP S5383578 A JPS5383578 A JP S5383578A JP 15813576 A JP15813576 A JP 15813576A JP 15813576 A JP15813576 A JP 15813576A JP S5383578 A JPS5383578 A JP S5383578A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
type semiconductor
pressure welding
full pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15813576A
Other languages
Japanese (ja)
Other versions
JPS5841769B2 (en
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15813576A priority Critical patent/JPS5841769B2/en
Publication of JPS5383578A publication Critical patent/JPS5383578A/en
Publication of JPS5841769B2 publication Critical patent/JPS5841769B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To eliminate the wafer distortion as well as to prevent the injury, by bonding the semiconductor wafer and the conductive substrate using a conductive adhesive not by the alloy bonding and by removing and packaging the conductive substrate after the process of giving a tilt to the surface of the PN junction.
COPYRIGHT: (C)1978,JPO&Japio
JP15813576A 1976-12-29 1976-12-29 Manufacturing method of full pressure contact type semiconductor device Expired JPS5841769B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15813576A JPS5841769B2 (en) 1976-12-29 1976-12-29 Manufacturing method of full pressure contact type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15813576A JPS5841769B2 (en) 1976-12-29 1976-12-29 Manufacturing method of full pressure contact type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5383578A true JPS5383578A (en) 1978-07-24
JPS5841769B2 JPS5841769B2 (en) 1983-09-14

Family

ID=15665030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15813576A Expired JPS5841769B2 (en) 1976-12-29 1976-12-29 Manufacturing method of full pressure contact type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5841769B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130272U (en) * 1984-02-13 1985-08-31 株式会社東芝 Indirect hydraulic elevator

Also Published As

Publication number Publication date
JPS5841769B2 (en) 1983-09-14

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