JPS528785A - Semiconductor device electrode structure - Google Patents

Semiconductor device electrode structure

Info

Publication number
JPS528785A
JPS528785A JP50084674A JP8467475A JPS528785A JP S528785 A JPS528785 A JP S528785A JP 50084674 A JP50084674 A JP 50084674A JP 8467475 A JP8467475 A JP 8467475A JP S528785 A JPS528785 A JP S528785A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrode structure
device electrode
changing
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50084674A
Other languages
Japanese (ja)
Inventor
Yuzo Maekawa
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP50084674A priority Critical patent/JPS528785A/en
Publication of JPS528785A publication Critical patent/JPS528785A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Abstract

PURPOSE: To increase electrode area without changing the chip size by providing a second metal wiring layer.
COPYRIGHT: (C)1977,JPO&Japio
JP50084674A 1975-07-10 1975-07-10 Semiconductor device electrode structure Pending JPS528785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50084674A JPS528785A (en) 1975-07-10 1975-07-10 Semiconductor device electrode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50084674A JPS528785A (en) 1975-07-10 1975-07-10 Semiconductor device electrode structure

Publications (1)

Publication Number Publication Date
JPS528785A true JPS528785A (en) 1977-01-22

Family

ID=13837240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50084674A Pending JPS528785A (en) 1975-07-10 1975-07-10 Semiconductor device electrode structure

Country Status (1)

Country Link
JP (1) JPS528785A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671510A (en) * 1979-11-14 1981-06-15 Hitachi Ltd Roll neck bearing device for rolling mill
JPS5739556A (en) * 1980-08-22 1982-03-04 Citizen Watch Co Ltd Ic electrode structure
JPS57106140A (en) * 1980-12-24 1982-07-01 Hitachi Ltd Semiconductor device and manufacture thereof
JPS57121812A (en) * 1981-01-21 1982-07-29 Hitachi Ltd Bearing for roll of rolling mill
JPS58194805U (en) * 1982-06-18 1983-12-24
JPS59113646A (en) * 1982-12-20 1984-06-30 Matsushita Electric Ind Co Ltd Semiconductor device
JPS60132221U (en) * 1984-02-15 1985-09-04
JPS6384050A (en) * 1986-09-26 1988-04-14 Nec Corp Integrated circuit
US5394013A (en) * 1990-11-28 1995-02-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with an elevated bonding pad
JPH1065044A (en) * 1996-06-07 1998-03-06 Lsi Logic Corp Semiconductor die having staggered bond pads
EP1006576A1 (en) * 1998-11-30 2000-06-07 Sharp Kabushiki Kaisha Semiconductor device
JP2005217445A (en) * 1996-12-04 2005-08-11 Seiko Epson Corp Production process of semiconductor device
JP2006318987A (en) * 2005-05-10 2006-11-24 Rohm Co Ltd Semiconductor chip, electrode structure thereof, and its formation method
US7183189B2 (en) 1996-12-04 2007-02-27 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
US7470979B2 (en) 1996-12-04 2008-12-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49116961A (en) * 1973-03-09 1974-11-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49116961A (en) * 1973-03-09 1974-11-08

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671510A (en) * 1979-11-14 1981-06-15 Hitachi Ltd Roll neck bearing device for rolling mill
JPS614284B2 (en) * 1979-11-14 1986-02-08 Hitachi Ltd
JPS5739556A (en) * 1980-08-22 1982-03-04 Citizen Watch Co Ltd Ic electrode structure
JPS57106140A (en) * 1980-12-24 1982-07-01 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6322464B2 (en) * 1980-12-24 1988-05-12 Hitachi Ltd
JPS57121812A (en) * 1981-01-21 1982-07-29 Hitachi Ltd Bearing for roll of rolling mill
JPS58194805U (en) * 1982-06-18 1983-12-24
JPH0133202Y2 (en) * 1982-06-18 1989-10-09
JPS59113646A (en) * 1982-12-20 1984-06-30 Matsushita Electric Ind Co Ltd Semiconductor device
JPS60132221U (en) * 1984-02-15 1985-09-04
JPH0111153Y2 (en) * 1984-02-15 1989-03-31
JPS6384050A (en) * 1986-09-26 1988-04-14 Nec Corp Integrated circuit
US5394013A (en) * 1990-11-28 1995-02-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with an elevated bonding pad
JPH1065044A (en) * 1996-06-07 1998-03-06 Lsi Logic Corp Semiconductor die having staggered bond pads
JP4656676B2 (en) * 1996-06-07 2011-03-23 エルエスアイ コーポレーション Semiconductor device having staggered bond pads
US7842598B2 (en) 1996-12-04 2010-11-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7183189B2 (en) 1996-12-04 2007-02-27 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
US7470979B2 (en) 1996-12-04 2008-12-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7511362B2 (en) 1996-12-04 2009-03-31 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7521796B2 (en) 1996-12-04 2009-04-21 Seiko Epson Corporation Method of making the semiconductor device, circuit board, and electronic instrument
JP4513973B2 (en) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 Manufacturing method of semiconductor device
JP2005217445A (en) * 1996-12-04 2005-08-11 Seiko Epson Corp Production process of semiconductor device
US7888260B2 (en) 1996-12-04 2011-02-15 Seiko Epson Corporation Method of making electronic device
US8115284B2 (en) 1996-12-04 2012-02-14 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board and electronic instrument
US8384213B2 (en) 1996-12-04 2013-02-26 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
EP1006576A1 (en) * 1998-11-30 2000-06-07 Sharp Kabushiki Kaisha Semiconductor device
JP2006318987A (en) * 2005-05-10 2006-11-24 Rohm Co Ltd Semiconductor chip, electrode structure thereof, and its formation method

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