JPS57106140A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57106140A
JPS57106140A JP55182010A JP18201080A JPS57106140A JP S57106140 A JPS57106140 A JP S57106140A JP 55182010 A JP55182010 A JP 55182010A JP 18201080 A JP18201080 A JP 18201080A JP S57106140 A JPS57106140 A JP S57106140A
Authority
JP
Japan
Prior art keywords
film
wire
layer
covered
corrosion resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55182010A
Other languages
Japanese (ja)
Other versions
JPS6322464B2 (en
Inventor
Keiji Miyamoto
Toru Kawanobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55182010A priority Critical patent/JPS57106140A/en
Publication of JPS57106140A publication Critical patent/JPS57106140A/en
Publication of JPS6322464B2 publication Critical patent/JPS6322464B2/ja
Granted legal-status Critical Current

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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the corrosion resistance of a semiconductor device by employing as the second wire of a lower layer aluminum, as an insulating film a Ti layer having good bonding property and as an upper layer a Cu layer having good corrosion resistance and conductivity and forming an Au film via Ni on the surface to be bonded. CONSTITUTION:A diffused region 2 is formed in an Si substrate 1. An oxidized film 3 is covered on the substrate. An aluminum wire is formed as the first wire in the contact. A silicate glass film 6 is covered on the contact. The aluminum wire is partly exposed via the through hole. Ti and Cu are deposited on the overall surface to form the second wire layers 8, 9. A passivation film 10 is covered thereon, is then patterned and etched to form the pattern in which the bonding pad of the second wire is punched. An Ni film 12 is formed as a primary layer on the surface of the Cu film of this pad. Then, an Au film 13 is formed. In this manner, since the Au is used partly, it can be manufactured inexpensively, and the corrosion resistance can be increased by the use of the passivation film.
JP55182010A 1980-12-24 1980-12-24 Semiconductor device and manufacture thereof Granted JPS57106140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55182010A JPS57106140A (en) 1980-12-24 1980-12-24 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55182010A JPS57106140A (en) 1980-12-24 1980-12-24 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57106140A true JPS57106140A (en) 1982-07-01
JPS6322464B2 JPS6322464B2 (en) 1988-05-12

Family

ID=16110741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55182010A Granted JPS57106140A (en) 1980-12-24 1980-12-24 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57106140A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555222A (en) * 1991-08-28 1993-03-05 Nec Corp Semiconductor device
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
JP2002373910A (en) * 2000-09-12 2002-12-26 Rohm Co Ltd Semiconductor device
JP2004128513A (en) * 2003-11-26 2004-04-22 Rohm Co Ltd Semiconductor device and its manufacturing method
US6794732B2 (en) 2001-07-25 2004-09-21 Rohn Co., Ltd. Semiconductor device and method of manufacturing the same
US7759803B2 (en) 2001-07-25 2010-07-20 Rohm Co., Ltd. Semiconductor device and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4847273A (en) * 1971-10-15 1973-07-05
JPS528785A (en) * 1975-07-10 1977-01-22 Citizen Watch Co Ltd Semiconductor device electrode structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4847273A (en) * 1971-10-15 1973-07-05
JPS528785A (en) * 1975-07-10 1977-01-22 Citizen Watch Co Ltd Semiconductor device electrode structure

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555222A (en) * 1991-08-28 1993-03-05 Nec Corp Semiconductor device
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
JP2002373910A (en) * 2000-09-12 2002-12-26 Rohm Co Ltd Semiconductor device
JP4754763B2 (en) * 2000-09-12 2011-08-24 ローム株式会社 Semiconductor device
US6794732B2 (en) 2001-07-25 2004-09-21 Rohn Co., Ltd. Semiconductor device and method of manufacturing the same
US7244635B2 (en) 2001-07-25 2007-07-17 Rohm Co., Ltd. Semiconductor device and method of manufacturing the same
US7759803B2 (en) 2001-07-25 2010-07-20 Rohm Co., Ltd. Semiconductor device and method of manufacturing the same
US8049343B2 (en) 2001-07-25 2011-11-01 Rohm Co., Ltd. Semiconductor device and method of manufacturing the same
JP2004128513A (en) * 2003-11-26 2004-04-22 Rohm Co Ltd Semiconductor device and its manufacturing method
JP4740536B2 (en) * 2003-11-26 2011-08-03 ローム株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6322464B2 (en) 1988-05-12

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