JPS57208160A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57208160A
JPS57208160A JP9474481A JP9474481A JPS57208160A JP S57208160 A JPS57208160 A JP S57208160A JP 9474481 A JP9474481 A JP 9474481A JP 9474481 A JP9474481 A JP 9474481A JP S57208160 A JPS57208160 A JP S57208160A
Authority
JP
Japan
Prior art keywords
layer
film
approx
thickness
wiring layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9474481A
Other languages
Japanese (ja)
Inventor
Toshihiko Ono
Makoto Serigano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9474481A priority Critical patent/JPS57208160A/en
Publication of JPS57208160A publication Critical patent/JPS57208160A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To largely reduce the area of an electrode section to be connected by arranging a conductive layer having etching speed different to the same etchant from upper and lower wiring layers on the surface of connecting part of the upper and lower wiring layers. CONSTITUTION:A wiring layer of the first layer made of an aluminum film 10 having approx. 1mum of thickness and its connecting electrode are formed on an SiO2 film 2 formed on a semiconductor substrate 1. Then, a wiring layer of the second layer and its connecting electrode are composed through an SiO2 film 4 formed by a CVD method of a Ti-W film 11 having approx. 1,000Angstrom as a lower layer and an aluminum film 12 having approx. 1.2mum of thickness as an upper layer. By employing a procedure described as such, in the case of patterning and ethcing the Al layer 12 of the second layer, even if there exist a positional displacement to some extent, the Ti-W film 11 prevents the Al film 10 of the first layer from being etched.
JP9474481A 1981-06-18 1981-06-18 Semiconductor device Pending JPS57208160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9474481A JPS57208160A (en) 1981-06-18 1981-06-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9474481A JPS57208160A (en) 1981-06-18 1981-06-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57208160A true JPS57208160A (en) 1982-12-21

Family

ID=14118628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9474481A Pending JPS57208160A (en) 1981-06-18 1981-06-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57208160A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278255A (en) * 1987-04-30 1988-11-15 Yokogawa Hewlett Packard Ltd Interlayer connection for integrated circuit
US4965226A (en) * 1987-10-16 1990-10-23 U.S. Philips Corporation Method of forming an interconnection between conductive levels

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149990A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Production of multilayer wirings
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device
JPS5640260A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149990A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Production of multilayer wirings
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device
JPS5640260A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278255A (en) * 1987-04-30 1988-11-15 Yokogawa Hewlett Packard Ltd Interlayer connection for integrated circuit
US4965226A (en) * 1987-10-16 1990-10-23 U.S. Philips Corporation Method of forming an interconnection between conductive levels

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