JPS57208160A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57208160A JPS57208160A JP9474481A JP9474481A JPS57208160A JP S57208160 A JPS57208160 A JP S57208160A JP 9474481 A JP9474481 A JP 9474481A JP 9474481 A JP9474481 A JP 9474481A JP S57208160 A JPS57208160 A JP S57208160A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- approx
- thickness
- wiring layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To largely reduce the area of an electrode section to be connected by arranging a conductive layer having etching speed different to the same etchant from upper and lower wiring layers on the surface of connecting part of the upper and lower wiring layers. CONSTITUTION:A wiring layer of the first layer made of an aluminum film 10 having approx. 1mum of thickness and its connecting electrode are formed on an SiO2 film 2 formed on a semiconductor substrate 1. Then, a wiring layer of the second layer and its connecting electrode are composed through an SiO2 film 4 formed by a CVD method of a Ti-W film 11 having approx. 1,000Angstrom as a lower layer and an aluminum film 12 having approx. 1.2mum of thickness as an upper layer. By employing a procedure described as such, in the case of patterning and ethcing the Al layer 12 of the second layer, even if there exist a positional displacement to some extent, the Ti-W film 11 prevents the Al film 10 of the first layer from being etched.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9474481A JPS57208160A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9474481A JPS57208160A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57208160A true JPS57208160A (en) | 1982-12-21 |
Family
ID=14118628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9474481A Pending JPS57208160A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57208160A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63278255A (en) * | 1987-04-30 | 1988-11-15 | Yokogawa Hewlett Packard Ltd | Interlayer connection for integrated circuit |
US4965226A (en) * | 1987-10-16 | 1990-10-23 | U.S. Philips Corporation | Method of forming an interconnection between conductive levels |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52149990A (en) * | 1976-06-09 | 1977-12-13 | Hitachi Ltd | Production of multilayer wirings |
JPS5365088A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
JPS5640260A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1981
- 1981-06-18 JP JP9474481A patent/JPS57208160A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52149990A (en) * | 1976-06-09 | 1977-12-13 | Hitachi Ltd | Production of multilayer wirings |
JPS5365088A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
JPS5640260A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63278255A (en) * | 1987-04-30 | 1988-11-15 | Yokogawa Hewlett Packard Ltd | Interlayer connection for integrated circuit |
US4965226A (en) * | 1987-10-16 | 1990-10-23 | U.S. Philips Corporation | Method of forming an interconnection between conductive levels |
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