JPS57152144A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57152144A
JPS57152144A JP56037555A JP3755581A JPS57152144A JP S57152144 A JPS57152144 A JP S57152144A JP 56037555 A JP56037555 A JP 56037555A JP 3755581 A JP3755581 A JP 3755581A JP S57152144 A JPS57152144 A JP S57152144A
Authority
JP
Japan
Prior art keywords
oxide film
wiring pattern
layer
interposing
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56037555A
Other languages
Japanese (ja)
Other versions
JPS6347147B2 (en
Inventor
Hideo Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56037555A priority Critical patent/JPS57152144A/en
Publication of JPS57152144A publication Critical patent/JPS57152144A/en
Publication of JPS6347147B2 publication Critical patent/JPS6347147B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To reduce capacity of wirings and to prevent generation of a crack due to stress enhancing reliability at multilayer wiring structure of a semiconductor device by a method wherein interlayer insulating layers are made to have structure having thickness at the under parts of metal wirings thicker than thickness of the interlayer insulating layers at the regions having no wiring. CONSTITUTION:The wiring pattern 210 of the first layer is formed on a substrate 200 having a functional element 201 interposing the silicon oxide film 202 between them. After the wiring pattern 220 of the second layer is formed thereon interposing the oxide film 211 between them, out of the oxide film 211, the region other than the region under the second layer wiring pattern 220 and the neighborhood thereof is etched selectively to make it thin. After the third layer wiring pattern 230 is formed interposing the oxide film 221 between them, out of the oxide film 221, the region other than the region under the third layey wiring pattern 230 and the neighborhood thereof is etched selectively to make it thin. Accordingly the interlayer insulating films can be formed at 0.5mum or less, and moreover generation of the crack can be prevented due to thermal and mechanical stress enhancing reliability.
JP56037555A 1981-03-16 1981-03-16 Semiconductor device Granted JPS57152144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56037555A JPS57152144A (en) 1981-03-16 1981-03-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56037555A JPS57152144A (en) 1981-03-16 1981-03-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57152144A true JPS57152144A (en) 1982-09-20
JPS6347147B2 JPS6347147B2 (en) 1988-09-20

Family

ID=12500757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56037555A Granted JPS57152144A (en) 1981-03-16 1981-03-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57152144A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150254U (en) * 1989-05-25 1990-12-25

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5054288A (en) * 1973-09-10 1975-05-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5054288A (en) * 1973-09-10 1975-05-13

Also Published As

Publication number Publication date
JPS6347147B2 (en) 1988-09-20

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