JPS57103333A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57103333A JPS57103333A JP17932180A JP17932180A JPS57103333A JP S57103333 A JPS57103333 A JP S57103333A JP 17932180 A JP17932180 A JP 17932180A JP 17932180 A JP17932180 A JP 17932180A JP S57103333 A JPS57103333 A JP S57103333A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- film
- covered
- insulating film
- spionglass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To obtain high passivation effect by forming the first wiring layer on a semiconductor substrate covered with an insulating layer formed with an element, and employing a spionglass film baked in plasma as an interlayer insulating film when forming the second wiring layer via an interlayer insulating film thereon. CONSTITUTION:The first aluminum wiring layer 12 is formed on a semiconductor substrate 11 covered with an insulating film formed with an element. A spionglass film 13 is coated on the overall surface including the layer, and the surface is smoothened while burying the space between the layers 12. Thereafter, the film 13 is annealed in oxygen plasma to be baked, and the second aluminum wiring layer 14 is covered thereon. Thus, annealing effect equivalent to the heat annealing at 550 deg.C can be presented even if the specimen temperature thus annealed is only up to approx. 300 deg.C, producing no crack, thereby obtaining high reliability in the multilayer wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932180A JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932180A JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57103333A true JPS57103333A (en) | 1982-06-26 |
| JPS646543B2 JPS646543B2 (en) | 1989-02-03 |
Family
ID=16063785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17932180A Granted JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103333A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164342A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | Formation of insulating film |
| JPH0497527A (en) * | 1990-08-16 | 1992-03-30 | Applied Materials Japan Kk | Method of preventing precipitation |
| WO2004012252A1 (en) * | 2002-07-30 | 2004-02-05 | Tokyo Electron Limited | Method for forming insulating layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542070A (en) * | 1977-06-07 | 1979-01-09 | Toshiba Corp | Manufacture for semiconductor element |
| JPS556291A (en) * | 1978-06-26 | 1980-01-17 | Contraves Ag | Digital interporation system for three pahse analog signal period |
-
1980
- 1980-12-18 JP JP17932180A patent/JPS57103333A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542070A (en) * | 1977-06-07 | 1979-01-09 | Toshiba Corp | Manufacture for semiconductor element |
| JPS556291A (en) * | 1978-06-26 | 1980-01-17 | Contraves Ag | Digital interporation system for three pahse analog signal period |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164342A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | Formation of insulating film |
| JPH0497527A (en) * | 1990-08-16 | 1992-03-30 | Applied Materials Japan Kk | Method of preventing precipitation |
| WO2004012252A1 (en) * | 2002-07-30 | 2004-02-05 | Tokyo Electron Limited | Method for forming insulating layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS646543B2 (en) | 1989-02-03 |
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