JPH0497527A - Method of preventing precipitation - Google Patents
Method of preventing precipitationInfo
- Publication number
- JPH0497527A JPH0497527A JP21598390A JP21598390A JPH0497527A JP H0497527 A JPH0497527 A JP H0497527A JP 21598390 A JP21598390 A JP 21598390A JP 21598390 A JP21598390 A JP 21598390A JP H0497527 A JPH0497527 A JP H0497527A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- boron
- precipitation
- film
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001556 precipitation Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 7
- 239000000126 substance Substances 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052796 boron Inorganic materials 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 238000009832 plasma treatment Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000005368 silicate glass Substances 0.000 abstract description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 239000005380 borophosphosilicate glass Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、吸湿性の高い物質をプラズマを用いて表面処
理を行う析出発生防止方法に関し、特にシリコン半導体
の製造において、その製造工程中のボロンリンシリケー
トグラス（以下、ＢＰＳＧ膜と呼ぶ）の膜表面をガスプ
ラズマによって、表面処理を行い表面反応による析出の
発生を防止する方法に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for preventing the occurrence of precipitation in which a highly hygroscopic substance is surface-treated using plasma, and particularly in the production of silicon semiconductors. The present invention relates to a method of treating the surface of a boron phosphorus silicate glass (hereinafter referred to as BPSG film) using gas plasma to prevent precipitation due to surface reactions.
（発明の背景）
シリコン半導体の製造工程中に用いられるＢＰＳＧ膜は
、シリコン半導体の金属配線間などの電気絶縁物（絶縁
膜）として使用されており、膜堆積後の熱処理によって
溶融し、平坦な状態に変化させることによって、次工程
以降の加工を容易にしている。(Background of the Invention) The BPSG film used during the manufacturing process of silicon semiconductors is used as an electrical insulator (insulating film) between metal interconnects of silicon semiconductors, and is melted by heat treatment after film deposition and flattened. By changing the state, processing from the next process onward is facilitated.
シリケートグラス（酸化珪素）中に含まれるリン、ボロ
ンの濃度が高くなると、この溶融温度は低くなる。リン
、ボロンを含まないＳｉＯ□（ガラス）は、その融点が
１４５０℃程度であるが、リン、ボロンを添加（ドープ
）すると、例えば、９００℃程度まで融点を下げること
ができる。最近の半導体の微細化傾向、即ち集積度を高
めるためには加工を容易にする必要から、リン、ボロン
の濃度は次第に高くなってきている。As the concentration of phosphorus and boron contained in silicate glass (silicon oxide) increases, this melting temperature decreases. SiO□ (glass) that does not contain phosphorus and boron has a melting point of about 1450°C, but when phosphorus and boron are added (doped), the melting point can be lowered to about 900°C, for example. Due to the recent trend toward miniaturization of semiconductors, that is, the need to facilitate processing in order to increase the degree of integration, the concentrations of phosphorus and boron are gradually increasing.
他方、ＢＰＳＧ膜のリン、ボロンの高い濃度領域では、
膜表面のリン、ボロンが空気中の水分と反応し、膜上に
析出物として残ることになる。濃度が高（なるにつれて
、析出物も多くなり、シリコン半導体の配線に短絡、配
線切れなどの悪影響を与える。On the other hand, in the high concentration region of phosphorus and boron in the BPSG film,
Phosphorus and boron on the membrane surface react with moisture in the air and remain as precipitates on the membrane. As the concentration increases, the number of precipitates increases, causing adverse effects such as short circuits and disconnections on silicon semiconductor wiring.
リン、ボロンを含まない５ｉＯｚ （ガラス）は空気中
の水分に対して比較的安定な化合物であるが、それに比
べてＢＰＳＧ膜中で化合している５酸化リン（Ｐ２０ｇ
） 、３酸化ボロン（Ｂ２Ｏ３）はその分子自体が水分
（Ｈ２Ｏ）と反応し、析出物として膜の表面に現れる。5iOz (glass), which does not contain phosphorus or boron, is a relatively stable compound against moisture in the air, but in comparison, phosphorus pentoxide (P20g
), the molecule of boron trioxide (B2O3) itself reacts with moisture (H2O) and appears on the surface of the film as a precipitate.
その析出量及び速さはリン、ボロンの濃度が高い程多く
、且つ速くなる。The amount and speed of precipitation increases and becomes faster as the concentration of phosphorus and boron increases.
従来は低濃度のものが用いられていたため、ＢＰＳＧ膜
の表面処理をする必要は殆どなかった。Conventionally, a low concentration was used, so there was almost no need to perform surface treatment on the BPSG film.
従来のＩＣは、例えばメモリの記憶容量か現在に比較し
て多くなく、ＩＣの面積当たりに作られるトランジスタ
などの量も少なかった。ところが、３年に４倍の割合で
メモリ量が増えており、ＩＣの面積当たりのトランジス
タ密度が大きくなるにつれて、トランジスタの形が複雑
化し、従来のＢＰＳＧ膜の濃度では同じ熱処理温度で充
分に溶融できなくなった。Conventional ICs, for example, did not have a large memory capacity compared to current ones, and the amount of transistors produced per IC area was also small. However, the amount of memory is increasing at a rate of four times every three years, and as the transistor density per IC area increases, the shape of the transistor becomes more complex, and the concentration of conventional BPSG films cannot be sufficiently melted at the same heat treatment temperature. I can't do it anymore.
また、ＢＰＳＧ膜を溶融するための熱処理によるトラン
ジスタ及びその周辺に対する応力の変化が問題視されて
きた。従って、その応力を緩和するための手段として、
より低温の処理が望まれ、−層のリン、ボロンの高濃度
化が必要とされてきた。Furthermore, changes in stress on the transistor and its surroundings due to heat treatment for melting the BPSG film have been viewed as a problem. Therefore, as a means to relieve that stress,
Lower temperature processing has been desired, and it has been necessary to increase the concentration of phosphorus and boron in the negative layer.
（本発明の解決すべき課題）
従って、本発明はシリコンウェハか大気にさらされる前
にＢＰＳＧ膜表面の安定化をはかるための処理を行い、
析出物の発生を防止することを目的とする。(Problems to be Solved by the Present Invention) Therefore, the present invention performs a treatment to stabilize the surface of the BPSG film before exposing the silicon wafer to the atmosphere.
The purpose is to prevent the formation of precipitates.
（課題を解決するための手段）
本発明は、プラズマを用いてＢＰＳＧ膜の表面処理を行
うことによって、膜表面の安定化をはかり析出物か発生
することを防止する方法を提供する。(Means for Solving the Problems) The present invention provides a method for stabilizing the surface of a BPSG film and preventing the formation of precipitates by treating the surface of a BPSG film using plasma.
（実施例）
図において、ｌは処理室、２はプラズマを発生するため
の高周波発生装置、３は導入するガス、例えば酸素など
の流量を制御する流量計、４はＢＰＳＧ膜が堆積したシ
リコンウェハ、５はウェハを載せるサセプター、６は処
理室を真空にするための真空ポンプである。(Example) In the figure, l is a processing chamber, 2 is a high-frequency generator for generating plasma, 3 is a flow meter that controls the flow rate of gas to be introduced, such as oxygen, and 4 is a silicon wafer on which a BPSG film is deposited. , 5 is a susceptor on which the wafer is placed, and 6 is a vacuum pump for evacuating the processing chamber.
この装置でＢＰＳＧが堆積したシリコンウェハ４をサセ
プター５上において、処理室ｌ内を真空ポンプ６により
真空状態にすると共に、高周波電力を発生させ、酸素ガ
スを送り込んで酸素プラズマを発生させる。このように
してシリコンウェハの表面を一定時間プラズマにさらす
。これにより膜表面の安定化がはかられ、析出が防止で
きるものである。In this apparatus, a silicon wafer 4 on which BPSG has been deposited is placed on a susceptor 5, and the inside of the processing chamber 1 is brought into a vacuum state by a vacuum pump 6, and high frequency power is generated to feed oxygen gas to generate oxygen plasma. In this way, the surface of the silicon wafer is exposed to plasma for a certain period of time. This stabilizes the membrane surface and prevents precipitation.
この処理室１で、例えば高周波電力５０〜６００Ｗ１酸
素供給量を毎分１００〜１０００ｃｃ１処理圧力を１〜
１０Ｔｏｒｒにコントロールし、１０〜６０秒間のプラ
ズマ処理を行うことにより、膜全体に対して、約６重量
パーセントのリン及びボロンの含まれたＰＢＳＧ膜の析
出状態を調べた。In this processing chamber 1, for example, a high frequency power of 50 to 600 W, an oxygen supply amount of 100 to 1000 cc per minute, and a processing pressure of 1 to
By controlling the pressure to 10 Torr and performing plasma treatment for 10 to 60 seconds, the state of precipitation of the PBSG film containing about 6% by weight of phosphorus and boron with respect to the entire film was investigated.
この酸素プラズマを使用した場合と使用しない場合につ
いて、ウェハ上のφ０．３μｍ以上の大きさのごみの数
を測ることのできるごみ検知器を用いて１２時間経過後
に測ったところ、下記の結果を得た。When this oxygen plasma was used and when it was not used, measurements were taken after 12 hours using a dust detector that can measure the number of dust on the wafer with a size of φ0.3 μm or more, and the following results were obtained. Obtained.
０２プラズマ処理の有無 ごみの数有り
十数値
無し １．０００〜２０．０００個こ
こで、ＳｉＯ２中のＰ２Ｏ５の濃度は５分子量パーセン
ト（ｍｏ ］％）、Ｂ２Ｏ３は１７ ｍｏ１％である。02 With or without plasma treatment?With the amount of garbage
No decimal value 1.000 to 20.000 Here, the concentration of P2O5 in SiO2 is 5 molecular weight percent (mo]%), and the concentration of B2O3 is 17 mo1%.
実験例から０２プラズマの処理の有無により、ＰＢＳＧ
膜上の析出物の量が大幅に改善されていることが判る。From the experimental examples, PBSG
It can be seen that the amount of precipitates on the membrane has been significantly improved.
析出はひどくなるとウェハを見たときに、曇りの形で目
視できるほどである。この曇りの程度はごみ検知器のご
みの量としである程度は定量できる。The precipitation is so severe that it becomes visible in the form of a cloudy appearance when looking at the wafer. The degree of cloudiness can be quantified to some extent by measuring the amount of dust in the dust detector.
何故プラズマ処理を行うと、このように良好な結果が得
られるかは理論的に解明されてはいないが、０□プラズ
マにＰＢＳＧ膜をさらすことによって、膜表面に残され
た不安定なＰ２Ｏ６，８２０３分子の終端されていない
ダングリングボンド（結合手）か、０または０．によっ
て終端され安定するものと考えられる。It is not theoretically understood why such good results can be obtained by plasma treatment, but by exposing the PBSG film to 0□ plasma, unstable P2O6, 8203 unterminated dangling bonds, 0 or 0. It is considered that the current is terminated and stabilized by .
本発明はプラズマ処理を行う処理室を特定するものでは
ない。処理室として１つの独立した室を用意してもよい
し、またＰＢＳＧ膜を成膜するための化学気相成長装置
において、ウェハ上にＰＢＳＧ膜を堆積した後、その場
で引き続きプラズマ処理を行ってもよい。The present invention does not specify a processing chamber in which plasma processing is performed. One independent chamber may be prepared as a processing chamber, or in a chemical vapor deposition apparatus for forming a PBSG film, after the PBSG film is deposited on the wafer, plasma processing may be continued on the spot. You can.
（効果）
本発明はＰＢＳＧ膜表面を０□プラズマ処理することに
よって、表面膜質の改善かなされ、リン、ポロンの析出
を大幅に低減できるものである。(Effects) The present invention improves the surface film quality by subjecting the surface of the PBSG film to 0□ plasma treatment, thereby significantly reducing the precipitation of phosphorus and poron.
図面は、本発明の方法を実施するための装置の概略図で
ある。
ｌ・・・処理室、 ２・・・高周波発生装置、３・・
・導入ガスの流量を制御する流量計、４・・・ウェハ、
−・・サセプター６・・・真空ポンプThe drawing is a schematic illustration of an apparatus for carrying out the method of the invention. l...processing chamber, 2...high frequency generator, 3...
・Flow meter that controls the flow rate of introduced gas, 4... wafer,
- Susceptor 6 Vacuum pump
Claims (1)
とを特徴とする析出発生防止方法。A precipitation prevention method characterized by surface treatment of a highly hygroscopic substance using plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2215983A JP2805243B2 (en) | 1990-08-16 | 1990-08-16 | Prevention of precipitation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2215983A JP2805243B2 (en) | 1990-08-16 | 1990-08-16 | Prevention of precipitation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0497527A true JPH0497527A (en) | 1992-03-30 |
| JP2805243B2 JP2805243B2 (en) | 1998-09-30 |
Family
ID=16681472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2215983A Expired - Fee Related JP2805243B2 (en) | 1990-08-16 | 1990-08-16 | Prevention of precipitation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2805243B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08227889A (en) * | 1995-02-21 | 1996-09-03 | Nec Corp | Semiconductor device and manufacture thereof |
| JP2007324293A (en) * | 2006-05-31 | 2007-12-13 | Tokyo Electron Ltd | Dehydrating method and dehydrating apparatus, substrate processing method and substrate processing apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825480A (en) * | 1971-08-04 | 1973-04-03 | ||
| JPS57103333A (en) * | 1980-12-18 | 1982-06-26 | Toshiba Corp | Manufacture of semiconductor device |
| JPS62179122A (en) * | 1986-01-31 | 1987-08-06 | Nec Corp | Formation of insulating film |
| JPS6425543A (en) * | 1987-07-22 | 1989-01-27 | Hitachi Ltd | Manufacture of film including silicon oxide |
-
1990
- 1990-08-16 JP JP2215983A patent/JP2805243B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825480A (en) * | 1971-08-04 | 1973-04-03 | ||
| JPS57103333A (en) * | 1980-12-18 | 1982-06-26 | Toshiba Corp | Manufacture of semiconductor device |
| JPS62179122A (en) * | 1986-01-31 | 1987-08-06 | Nec Corp | Formation of insulating film |
| JPS6425543A (en) * | 1987-07-22 | 1989-01-27 | Hitachi Ltd | Manufacture of film including silicon oxide |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08227889A (en) * | 1995-02-21 | 1996-09-03 | Nec Corp | Semiconductor device and manufacture thereof |
| JP2007324293A (en) * | 2006-05-31 | 2007-12-13 | Tokyo Electron Ltd | Dehydrating method and dehydrating apparatus, substrate processing method and substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2805243B2 (en) | 1998-09-30 |
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