JPS6425543A - Manufacture of film including silicon oxide - Google Patents
Manufacture of film including silicon oxideInfo
- Publication number
- JPS6425543A JPS6425543A JP18111487A JP18111487A JPS6425543A JP S6425543 A JPS6425543 A JP S6425543A JP 18111487 A JP18111487 A JP 18111487A JP 18111487 A JP18111487 A JP 18111487A JP S6425543 A JPS6425543 A JP S6425543A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- plasma
- silicon oxide
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve crack resistance and moisture resistance when an SiO2 film is heated, by exposing a film, which is formed on a semiconductor substrate and includes silicon oxide to gas plasma including F, thereby efficiently doping F into the SiO2. CONSTITUTION:A film, which includes silicon oxide, e.g., an SiO2 film, is provided on a substrate. Thereafter, the film is exposed to a gas including F. It is desirable that the gas including F is in a plasma state. As the film on the substrate, a film, on which silica or applying type glass 9 (SOG) liquid is applied, can be used. At this time, said film is exposed in the gas or plasma including F after the silica film is provided or the SOG solution is applied before a final heat treatment. The temperature of the film is gradually increased from room temperature to a final baking temperature (100-1,200 deg.C). During this period, it is desirable that the film is exposed to the plasma or the gas. Thus, the yield of cracks in the glass film during the baking after the plasma treatment is prevented, and the thickness of the glass film is increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18111487A JPS6425543A (en) | 1987-07-22 | 1987-07-22 | Manufacture of film including silicon oxide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18111487A JPS6425543A (en) | 1987-07-22 | 1987-07-22 | Manufacture of film including silicon oxide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425543A true JPS6425543A (en) | 1989-01-27 |
Family
ID=16095092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18111487A Pending JPS6425543A (en) | 1987-07-22 | 1987-07-22 | Manufacture of film including silicon oxide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425543A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01130535A (en) * | 1987-11-17 | 1989-05-23 | Tokyo Ohka Kogyo Co Ltd | Formation of silicone coating |
JPH02237030A (en) * | 1989-03-09 | 1990-09-19 | Catalysts & Chem Ind Co Ltd | Manufacture of semiconductor integrated circuit |
JPH0497527A (en) * | 1990-08-16 | 1992-03-30 | Applied Materials Japan Kk | Method of preventing precipitation |
US5376591A (en) * | 1992-06-05 | 1994-12-27 | Semiconductor Process Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US5407529A (en) * | 1992-03-04 | 1995-04-18 | Nec Corporation | Method for manufacturing semiconductor device |
US5763329A (en) * | 1996-01-26 | 1998-06-09 | Nec Corporation | Method for making semiconductor device by coating an SOG film in amine gas atmosphere |
JP2020047665A (en) * | 2018-09-14 | 2020-03-26 | 株式会社東芝 | Semiconductor device, manufacturing method thereof, inverter circuit, drive device, vehicle, and elevator |
-
1987
- 1987-07-22 JP JP18111487A patent/JPS6425543A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01130535A (en) * | 1987-11-17 | 1989-05-23 | Tokyo Ohka Kogyo Co Ltd | Formation of silicone coating |
JPH02237030A (en) * | 1989-03-09 | 1990-09-19 | Catalysts & Chem Ind Co Ltd | Manufacture of semiconductor integrated circuit |
JPH0497527A (en) * | 1990-08-16 | 1992-03-30 | Applied Materials Japan Kk | Method of preventing precipitation |
US5407529A (en) * | 1992-03-04 | 1995-04-18 | Nec Corporation | Method for manufacturing semiconductor device |
US5376591A (en) * | 1992-06-05 | 1994-12-27 | Semiconductor Process Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US5763329A (en) * | 1996-01-26 | 1998-06-09 | Nec Corporation | Method for making semiconductor device by coating an SOG film in amine gas atmosphere |
JP2020047665A (en) * | 2018-09-14 | 2020-03-26 | 株式会社東芝 | Semiconductor device, manufacturing method thereof, inverter circuit, drive device, vehicle, and elevator |
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