JPS562636A - Inactivation method of surface of semiconductor - Google Patents
Inactivation method of surface of semiconductorInfo
- Publication number
- JPS562636A JPS562636A JP7821279A JP7821279A JPS562636A JP S562636 A JPS562636 A JP S562636A JP 7821279 A JP7821279 A JP 7821279A JP 7821279 A JP7821279 A JP 7821279A JP S562636 A JPS562636 A JP S562636A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- semiconductor
- treated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To inactivate the surface of a semiconductor made of compound by coating silica emulsion on the surface of the semiconductor, heating it, and forming an oxide film having preferable broundary properties and insulating property. CONSTITUTION:After purifying the surface of a GaAs substrate, silica emulsion (containing silica, its organic compound as bases in an alcoholic solution) is rotatably coated on the substrate in a dry atmosphere. The solution is diluted with alcohol or the rotating speed is altered to vary the thickness of the oxide film. The oxide film thus formed is heat treated at 160, 450 and 700 deg.C in dry N2 to densify the oxide (SiO2) film. The densifying temperature is preferably 600-800 deg.C. Finally, when it is treated at 500 deg.C in 2%-H2+98%-N2, the SiO2 film becomes preferable characteristics. Aluminum is evaporated thereon, the back surface of the substrate is cleaned, aluminum is then evaporated, and it is treated at 450 deg.C in 2%-H2+98%-N2. Then, the properties in the boundary between the insulating film and the semicondcutor can be improved. According to this method, it can be simply inactivated on the surface as compared with the conventional process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7821279A JPS562636A (en) | 1979-06-22 | 1979-06-22 | Inactivation method of surface of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7821279A JPS562636A (en) | 1979-06-22 | 1979-06-22 | Inactivation method of surface of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS562636A true JPS562636A (en) | 1981-01-12 |
Family
ID=13655733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7821279A Pending JPS562636A (en) | 1979-06-22 | 1979-06-22 | Inactivation method of surface of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS562636A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58144182U (en) * | 1982-03-23 | 1983-09-28 | 積水化学工業株式会社 | Synthetic resin pipe fittings |
US4552869A (en) * | 1981-08-12 | 1985-11-12 | A. Nattermann & Cie Gmbh | O-Alkyl-O-carbamoylglycerophosphocholines and the use for treating hypertension |
JPH01202826A (en) * | 1987-12-28 | 1989-08-15 | Dow Corning Corp | Method of forming ceramic coating on substrate |
FR2852946A1 (en) * | 2003-03-31 | 2004-10-01 | Rhodia Chimie Sa | Emulsion, e.g. useful in detergents, cosmetics, water treatment, concrete and mortar additives, thickeners, comprises amphiphilic silica particles at the interface between the discontinuous and continuous phases |
-
1979
- 1979-06-22 JP JP7821279A patent/JPS562636A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4552869A (en) * | 1981-08-12 | 1985-11-12 | A. Nattermann & Cie Gmbh | O-Alkyl-O-carbamoylglycerophosphocholines and the use for treating hypertension |
JPS58144182U (en) * | 1982-03-23 | 1983-09-28 | 積水化学工業株式会社 | Synthetic resin pipe fittings |
JPH01202826A (en) * | 1987-12-28 | 1989-08-15 | Dow Corning Corp | Method of forming ceramic coating on substrate |
FR2852946A1 (en) * | 2003-03-31 | 2004-10-01 | Rhodia Chimie Sa | Emulsion, e.g. useful in detergents, cosmetics, water treatment, concrete and mortar additives, thickeners, comprises amphiphilic silica particles at the interface between the discontinuous and continuous phases |
WO2004094310A3 (en) * | 2003-03-31 | 2005-01-20 | Rhodia Chimie Sa | Emulsion containing amphiphile silica particles and method for the production thereof |
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