JPS54159186A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54159186A
JPS54159186A JP6851378A JP6851378A JPS54159186A JP S54159186 A JPS54159186 A JP S54159186A JP 6851378 A JP6851378 A JP 6851378A JP 6851378 A JP6851378 A JP 6851378A JP S54159186 A JPS54159186 A JP S54159186A
Authority
JP
Japan
Prior art keywords
electrode
film
diode
type
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6851378A
Other languages
Japanese (ja)
Other versions
JPS6259467B2 (en
Inventor
Nobuo Toyokura
Hiroshi Tokunaga
Shinichi Inoue
Hajime Ishikawa
Masaichi Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6851378A priority Critical patent/JPS54159186A/en
Priority to NL7902247A priority patent/NL7902247A/en
Priority to DE2911484A priority patent/DE2911484C2/en
Priority to US06/023,460 priority patent/US4270136A/en
Publication of JPS54159186A publication Critical patent/JPS54159186A/en
Priority to US06/217,689 priority patent/US4349395A/en
Publication of JPS6259467B2 publication Critical patent/JPS6259467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To avoid external contamination, by providing Mo layer including P on the semiconductor substrate insulation film. CONSTITUTION:The Mo film including P for about 10<10> to 10<20> particles/cm<3> is coated to the SiO2 film on the P type Si substrate by menas of sputtering to form the diode by forming the electrode on it. In this MOS diode, Na<-> ions are caught with P introduced at the boundary between the Mo electrode and the SiO2 film by means of P in the Mo electrode and heating at the heat treatment of 800 to 1000 deg.C. Thus, the possibility of n transformation of the p type substrate surface is less and the element is made stable. Thus, with a simple constitution, more stable device can be established.
JP6851378A 1978-03-25 1978-06-07 Semiconductor device Granted JPS54159186A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6851378A JPS54159186A (en) 1978-06-07 1978-06-07 Semiconductor device
NL7902247A NL7902247A (en) 1978-03-25 1979-03-22 METAL INSULATOR SEMICONDUCTOR TYPE SEMICONDUCTOR DEVICE AND PROCEDURE FOR MANUFACTURING IT.
DE2911484A DE2911484C2 (en) 1978-03-25 1979-03-23 Metal-insulator-semiconductor component
US06/023,460 US4270136A (en) 1978-03-25 1979-03-23 MIS Device having a metal and insulating layer containing at least one cation-trapping element
US06/217,689 US4349395A (en) 1978-03-25 1980-12-18 Method for producing MOS semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6851378A JPS54159186A (en) 1978-06-07 1978-06-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54159186A true JPS54159186A (en) 1979-12-15
JPS6259467B2 JPS6259467B2 (en) 1987-12-11

Family

ID=13375864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6851378A Granted JPS54159186A (en) 1978-03-25 1978-06-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54159186A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153449A (en) * 1981-03-17 1982-09-22 Nec Corp Integrated circuit device
JPS57162444A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device
JPS61140177A (en) * 1984-12-13 1986-06-27 Nippon Precision Saakitsutsu Kk Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0453736Y2 (en) * 1988-05-10 1992-12-17
JPH0677642U (en) * 1993-04-22 1994-11-01 深井 健二 Knee rest structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260080A (en) * 1975-11-12 1977-05-18 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260080A (en) * 1975-11-12 1977-05-18 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153449A (en) * 1981-03-17 1982-09-22 Nec Corp Integrated circuit device
JPS57162444A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device
JPS61140177A (en) * 1984-12-13 1986-06-27 Nippon Precision Saakitsutsu Kk Semiconductor device

Also Published As

Publication number Publication date
JPS6259467B2 (en) 1987-12-11

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