JPS5323574A - Forming method of silicon oxide film - Google Patents

Forming method of silicon oxide film

Info

Publication number
JPS5323574A
JPS5323574A JP9789976A JP9789976A JPS5323574A JP S5323574 A JPS5323574 A JP S5323574A JP 9789976 A JP9789976 A JP 9789976A JP 9789976 A JP9789976 A JP 9789976A JP S5323574 A JPS5323574 A JP S5323574A
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
forming method
souce
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9789976A
Other languages
Japanese (ja)
Inventor
Yukio Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9789976A priority Critical patent/JPS5323574A/en
Publication of JPS5323574A publication Critical patent/JPS5323574A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To improve the electrical characteristics such as leakage current between souce and gate, current amplification factor, etc. by applying heat treatment in the O2 atmosphere of the same temperature to the SiO2 film formed at a low temperature by a silane oxidation method on a semiconductor substrate surface.
COPYRIGHT: (C)1978,JPO&Japio
JP9789976A 1976-08-17 1976-08-17 Forming method of silicon oxide film Pending JPS5323574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9789976A JPS5323574A (en) 1976-08-17 1976-08-17 Forming method of silicon oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9789976A JPS5323574A (en) 1976-08-17 1976-08-17 Forming method of silicon oxide film

Publications (1)

Publication Number Publication Date
JPS5323574A true JPS5323574A (en) 1978-03-04

Family

ID=14204576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9789976A Pending JPS5323574A (en) 1976-08-17 1976-08-17 Forming method of silicon oxide film

Country Status (1)

Country Link
JP (1) JPS5323574A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085935U (en) * 1973-12-12 1975-07-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085935U (en) * 1973-12-12 1975-07-22

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