JPS5559778A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5559778A JPS5559778A JP13268678A JP13268678A JPS5559778A JP S5559778 A JPS5559778 A JP S5559778A JP 13268678 A JP13268678 A JP 13268678A JP 13268678 A JP13268678 A JP 13268678A JP S5559778 A JPS5559778 A JP S5559778A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- polysilicon
- phosphorus
- semiconductor device
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To prevent an automatic doping process of phosphorus in a semiconductor device by doping phosphorus in low concentration in a polysilicon, forming a thick interlayer insulator film thereat by low temperature oxidation, then temporarily removing the oxide film on a gate, and oxidizing it at high temperature.
CONSTITUTION: A thick field oxide film 2 is formed on a P-type silicon crystal substrate 1, a first gate oxide film 3 is formed thereon, and a polysilicon film 4 is then formed thereon. Phosphorus is introduced in low concentration thereto while or after forming the polysilicon. Then, after part 1A of the substrate is exposed, an oxide film 5' is formed on the entire surface thereof. Further, a high temperature oxidation is conducted to form an oxide film 6' to thereby complete a two-layer polysilicon semiconductor element.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13268678A JPS5559778A (en) | 1978-10-30 | 1978-10-30 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13268678A JPS5559778A (en) | 1978-10-30 | 1978-10-30 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5559778A true JPS5559778A (en) | 1980-05-06 |
Family
ID=15087145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13268678A Pending JPS5559778A (en) | 1978-10-30 | 1978-10-30 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5559778A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5889869A (en) * | 1981-11-20 | 1983-05-28 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS58161359A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS59188962A (en) * | 1983-04-12 | 1984-10-26 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1978
- 1978-10-30 JP JP13268678A patent/JPS5559778A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5889869A (en) * | 1981-11-20 | 1983-05-28 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS6312389B2 (en) * | 1981-11-20 | 1988-03-18 | Matsushita Electronics Corp | |
JPS58161359A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS59188962A (en) * | 1983-04-12 | 1984-10-26 | Matsushita Electronics Corp | Manufacture of semiconductor device |
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