JPS5559778A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5559778A
JPS5559778A JP13268678A JP13268678A JPS5559778A JP S5559778 A JPS5559778 A JP S5559778A JP 13268678 A JP13268678 A JP 13268678A JP 13268678 A JP13268678 A JP 13268678A JP S5559778 A JPS5559778 A JP S5559778A
Authority
JP
Japan
Prior art keywords
oxide film
polysilicon
phosphorus
semiconductor device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13268678A
Other languages
Japanese (ja)
Inventor
Jun Murata
Kuniki Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13268678A priority Critical patent/JPS5559778A/en
Publication of JPS5559778A publication Critical patent/JPS5559778A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To prevent an automatic doping process of phosphorus in a semiconductor device by doping phosphorus in low concentration in a polysilicon, forming a thick interlayer insulator film thereat by low temperature oxidation, then temporarily removing the oxide film on a gate, and oxidizing it at high temperature.
CONSTITUTION: A thick field oxide film 2 is formed on a P-type silicon crystal substrate 1, a first gate oxide film 3 is formed thereon, and a polysilicon film 4 is then formed thereon. Phosphorus is introduced in low concentration thereto while or after forming the polysilicon. Then, after part 1A of the substrate is exposed, an oxide film 5' is formed on the entire surface thereof. Further, a high temperature oxidation is conducted to form an oxide film 6' to thereby complete a two-layer polysilicon semiconductor element.
COPYRIGHT: (C)1980,JPO&Japio
JP13268678A 1978-10-30 1978-10-30 Method of fabricating semiconductor device Pending JPS5559778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13268678A JPS5559778A (en) 1978-10-30 1978-10-30 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13268678A JPS5559778A (en) 1978-10-30 1978-10-30 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS5559778A true JPS5559778A (en) 1980-05-06

Family

ID=15087145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13268678A Pending JPS5559778A (en) 1978-10-30 1978-10-30 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5559778A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889869A (en) * 1981-11-20 1983-05-28 Matsushita Electronics Corp Manufacture of semiconductor device
JPS58161359A (en) * 1982-03-19 1983-09-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS59188962A (en) * 1983-04-12 1984-10-26 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889869A (en) * 1981-11-20 1983-05-28 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6312389B2 (en) * 1981-11-20 1988-03-18 Matsushita Electronics Corp
JPS58161359A (en) * 1982-03-19 1983-09-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS59188962A (en) * 1983-04-12 1984-10-26 Matsushita Electronics Corp Manufacture of semiconductor device

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