JPS6411343A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6411343A JPS6411343A JP16719287A JP16719287A JPS6411343A JP S6411343 A JPS6411343 A JP S6411343A JP 16719287 A JP16719287 A JP 16719287A JP 16719287 A JP16719287 A JP 16719287A JP S6411343 A JPS6411343 A JP S6411343A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- film
- films
- polycrystal silicon
- leakage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the increase of a leakage of electricity due to concentration of electric fields in a low current region by making the height of an insulating film in an isolation region higher than that of the surface of an element formation region and further, by forming edge parts of the element formation region at an obtuse angle. CONSTITUTION:Grooves 34 are formed by etching a p-type silicon substrate 30 where SiO2 and polycrystal silicon films 31 and 32 are formed. Then a SiO2 film 35 is formed by treating with heat in an oxidized atmosphere. In such a case, bird's beaks develop below the polycrystal silicon films 32 and thick SiO2 films 36 are formed. The SiO2 films 37 are formed with a thermal decomposition process so as to fill up the grooves 34. And then a photoresist film is coated and the SiO2 films 37 are etched excessively to expose the polycrystal silicon film 32. And then, a gate oxide film 38 and a gate electrode 39 are formed after removing the polycrystal silicon film 32 and SiO2 film 31. As edge parts 40 of a MOS transistor formed in this way have smoothed angular parts, the increase of a leakage of electricity due to concentration of electric fields does not develop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16719287A JPS6411343A (en) | 1987-07-03 | 1987-07-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16719287A JPS6411343A (en) | 1987-07-03 | 1987-07-03 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411343A true JPS6411343A (en) | 1989-01-13 |
Family
ID=15845136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16719287A Pending JPS6411343A (en) | 1987-07-03 | 1987-07-03 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411343A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0560985A1 (en) * | 1991-10-01 | 1993-09-22 | Hitachi, Ltd. | Semiconductor integrated circuit device and manufacture thereof |
| US5733383A (en) * | 1992-12-10 | 1998-03-31 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
| KR20000073736A (en) * | 1999-05-13 | 2000-12-05 | 황인길 | Method of isolating semiconductor elements using trench |
| EP1183687A1 (en) * | 2000-02-23 | 2002-03-06 | Havin Co., Ltd. | Apparatus and method for recording digital audio data file |
-
1987
- 1987-07-03 JP JP16719287A patent/JPS6411343A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0560985A1 (en) * | 1991-10-01 | 1993-09-22 | Hitachi, Ltd. | Semiconductor integrated circuit device and manufacture thereof |
| US5455438A (en) * | 1991-10-01 | 1995-10-03 | Hitachi, Ltd. | Semiconductor integrated circuit device in which kink current disturbances of MOS transistors are suppressed |
| US5733383A (en) * | 1992-12-10 | 1998-03-31 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
| US5868870A (en) * | 1992-12-10 | 1999-02-09 | Micron Technology, Inc. | Isolation structure of a shallow semiconductor device trench |
| US5966615A (en) * | 1992-12-10 | 1999-10-12 | Micron Technology, Inc. | Method of trench isolation using spacers to form isolation trenches with protected corners |
| KR20000073736A (en) * | 1999-05-13 | 2000-12-05 | 황인길 | Method of isolating semiconductor elements using trench |
| EP1183687A1 (en) * | 2000-02-23 | 2002-03-06 | Havin Co., Ltd. | Apparatus and method for recording digital audio data file |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0352224B2 (en) | ||
| JPS57196573A (en) | Manufacture of mos type semiconductor device | |
| GB2037073A (en) | Method of producing a metal-semiconductor fieldeffect transistor | |
| JPS6411343A (en) | Manufacture of semiconductor device | |
| JPS5544713A (en) | Semiconductor device | |
| JPS6133253B2 (en) | ||
| JPS5575238A (en) | Method of fabricating semiconductor device | |
| JPS5568651A (en) | Manufacturing method of semiconductor device | |
| JPS5624937A (en) | Manufacture of semiconductor device | |
| JPS57134956A (en) | Manufacture of semiconductor integrated circuit | |
| GB1495460A (en) | Semiconductor device manufacture | |
| JPS54102980A (en) | Mos-type semiconductor device and its manufacture | |
| JPS5553461A (en) | Manufacture of semiconductor device | |
| JPS5533037A (en) | Manufacture of semiconductor device | |
| JPS5559778A (en) | Method of fabricating semiconductor device | |
| JPS57196543A (en) | Manufacture of semiconductor device | |
| JPS5533051A (en) | Manufacture of semiconductor device | |
| JPS6461928A (en) | Manufacture of semiconductor device | |
| JPS5685853A (en) | Manufacture of semiconductor device | |
| JPS5580333A (en) | Manufacture of mos semiconductor device | |
| JPS5572080A (en) | Production of silicone gate type semiconductor device | |
| JPS5518042A (en) | Method of fabricating semiconductor device | |
| JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
| JPS55133542A (en) | Manufacturing method of mesa-type semiconductor device | |
| JPS55166960A (en) | Manufacture of field effect semiconductor device |