JPS5572080A - Production of silicone gate type semiconductor device - Google Patents

Production of silicone gate type semiconductor device

Info

Publication number
JPS5572080A
JPS5572080A JP14622478A JP14622478A JPS5572080A JP S5572080 A JPS5572080 A JP S5572080A JP 14622478 A JP14622478 A JP 14622478A JP 14622478 A JP14622478 A JP 14622478A JP S5572080 A JPS5572080 A JP S5572080A
Authority
JP
Japan
Prior art keywords
film
substrate
electrode
gate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14622478A
Other languages
Japanese (ja)
Inventor
Atsushi Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14622478A priority Critical patent/JPS5572080A/en
Publication of JPS5572080A publication Critical patent/JPS5572080A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To eliminate the need for highly accurate positioning with a window given the source and drain regions in a self-aligning manner using as the mask an Si3N4 film formed by directly nitriding the surface of a silicone gate provided on a semiconductor through a gate insulating film.
CONSTITUTION: A thick field SiO2 film 20 is provided at either end of an Si substrate 10 and the surface of the substrate 10 surrounded by the film 20 is coated with a thin gate SiO2 film 30. A polycrystaline Si gate electrode 40 is formed at the centeral part of the film 30. Then, with the electrode 40 as the mask, source and drain regions 50 are formed along both sides thereof in the substrate 10 by thermal diffusion or ion injection, and an Si3N4 film 80 is produced only around the electrode by heating in the N2 atmosphere up to 1,100°C. Subsequently, the substrate is immersed in a water solution of fluoric acid to selectively remove the exposed portion of the film 30 and the surface portion of the film 20 whereby the surface of a region 50 is exposed. An electrode 70 is applied on the region covering from the surface to the film 20. This eliminates the need for positioning in the making the window in the region 50.
COPYRIGHT: (C)1980,JPO&Japio
JP14622478A 1978-11-27 1978-11-27 Production of silicone gate type semiconductor device Pending JPS5572080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14622478A JPS5572080A (en) 1978-11-27 1978-11-27 Production of silicone gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14622478A JPS5572080A (en) 1978-11-27 1978-11-27 Production of silicone gate type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5572080A true JPS5572080A (en) 1980-05-30

Family

ID=15402910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14622478A Pending JPS5572080A (en) 1978-11-27 1978-11-27 Production of silicone gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5572080A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732672A (en) * 1980-08-04 1982-02-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57106077A (en) * 1980-12-22 1982-07-01 Seiko Epson Corp Manufacture of semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732672A (en) * 1980-08-04 1982-02-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57106077A (en) * 1980-12-22 1982-07-01 Seiko Epson Corp Manufacture of semiconductor integrated circuit device

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