JPS5572080A - Production of silicone gate type semiconductor device - Google Patents
Production of silicone gate type semiconductor deviceInfo
- Publication number
- JPS5572080A JPS5572080A JP14622478A JP14622478A JPS5572080A JP S5572080 A JPS5572080 A JP S5572080A JP 14622478 A JP14622478 A JP 14622478A JP 14622478 A JP14622478 A JP 14622478A JP S5572080 A JPS5572080 A JP S5572080A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- electrode
- gate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To eliminate the need for highly accurate positioning with a window given the source and drain regions in a self-aligning manner using as the mask an Si3N4 film formed by directly nitriding the surface of a silicone gate provided on a semiconductor through a gate insulating film.
CONSTITUTION: A thick field SiO2 film 20 is provided at either end of an Si substrate 10 and the surface of the substrate 10 surrounded by the film 20 is coated with a thin gate SiO2 film 30. A polycrystaline Si gate electrode 40 is formed at the centeral part of the film 30. Then, with the electrode 40 as the mask, source and drain regions 50 are formed along both sides thereof in the substrate 10 by thermal diffusion or ion injection, and an Si3N4 film 80 is produced only around the electrode by heating in the N2 atmosphere up to 1,100°C. Subsequently, the substrate is immersed in a water solution of fluoric acid to selectively remove the exposed portion of the film 30 and the surface portion of the film 20 whereby the surface of a region 50 is exposed. An electrode 70 is applied on the region covering from the surface to the film 20. This eliminates the need for positioning in the making the window in the region 50.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14622478A JPS5572080A (en) | 1978-11-27 | 1978-11-27 | Production of silicone gate type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14622478A JPS5572080A (en) | 1978-11-27 | 1978-11-27 | Production of silicone gate type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5572080A true JPS5572080A (en) | 1980-05-30 |
Family
ID=15402910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14622478A Pending JPS5572080A (en) | 1978-11-27 | 1978-11-27 | Production of silicone gate type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5572080A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732672A (en) * | 1980-08-04 | 1982-02-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57106077A (en) * | 1980-12-22 | 1982-07-01 | Seiko Epson Corp | Manufacture of semiconductor integrated circuit device |
-
1978
- 1978-11-27 JP JP14622478A patent/JPS5572080A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732672A (en) * | 1980-08-04 | 1982-02-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57106077A (en) * | 1980-12-22 | 1982-07-01 | Seiko Epson Corp | Manufacture of semiconductor integrated circuit device |
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