JPS5524603A - Chemically responsive element and production thereof - Google Patents

Chemically responsive element and production thereof

Info

Publication number
JPS5524603A
JPS5524603A JP9660278A JP9660278A JPS5524603A JP S5524603 A JPS5524603 A JP S5524603A JP 9660278 A JP9660278 A JP 9660278A JP 9660278 A JP9660278 A JP 9660278A JP S5524603 A JPS5524603 A JP S5524603A
Authority
JP
Japan
Prior art keywords
region
layer
sio
substrate
responsive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9660278A
Other languages
Japanese (ja)
Inventor
Kazumuki Yanagisawa
Masayuki Matsuo
Masaki Esashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP9660278A priority Critical patent/JPS5524603A/en
Publication of JPS5524603A publication Critical patent/JPS5524603A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To improve the water-proof and ion impermeable property by covering at least such a portion of an FET type chemical responsive element as is to be dipped in a solution to be measured with a preset material as a whole.
CONSTITUTION: A p type Si substrate 41 has its both sides oxidized to form SiO2 layers 60 and 61 at the both sides thereof. Then, the element forming portion is removed from the layer 60 thereby to form on the exposed substrate 41 a drain diffusion region 62, a source diffusion region 63, a p+ channel stopper region 64 and a channel region 65. After an n+ region for contact has been formed, the removed portion of the substrate 41 and layer 60 of a scribe line are removed and selectively etched. The exposed front side of the element is covered with an SiO2 layer 68. After the responsive portion of the element and the layer 60 of the drain contact region are removed, an SiO2 layer 70 is formed so that a gate film 71 is formed on the region 65. Moreover, the front portion of the element is covered with an insulating layer 72 such as impermeable and chemically responsive Sr3N4.
COPYRIGHT: (C)1980,JPO&Japio
JP9660278A 1978-08-10 1978-08-10 Chemically responsive element and production thereof Pending JPS5524603A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9660278A JPS5524603A (en) 1978-08-10 1978-08-10 Chemically responsive element and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9660278A JPS5524603A (en) 1978-08-10 1978-08-10 Chemically responsive element and production thereof

Publications (1)

Publication Number Publication Date
JPS5524603A true JPS5524603A (en) 1980-02-21

Family

ID=14169415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9660278A Pending JPS5524603A (en) 1978-08-10 1978-08-10 Chemically responsive element and production thereof

Country Status (1)

Country Link
JP (1) JPS5524603A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160652A (en) * 1980-05-15 1981-12-10 Matsushita Electric Ind Co Ltd Manufacture of glass sensitive film of glass electrode
JPS57203946A (en) * 1981-06-11 1982-12-14 Olympus Optical Co Ltd Ion selective electrode
EP0155193A2 (en) * 1984-03-16 1985-09-18 Serono Diagnostics Limited Methods of assay
JPS62245956A (en) * 1986-04-18 1987-10-27 Kuraray Co Ltd Production of isfet ph sensor having good water resistance
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture
JP2016045201A (en) * 2014-08-19 2016-04-04 ハネウェル・インターナショナル・インコーポレーテッド Prevention of stray current in sensor of conductive medium

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160652A (en) * 1980-05-15 1981-12-10 Matsushita Electric Ind Co Ltd Manufacture of glass sensitive film of glass electrode
JPS57203946A (en) * 1981-06-11 1982-12-14 Olympus Optical Co Ltd Ion selective electrode
EP0155193A2 (en) * 1984-03-16 1985-09-18 Serono Diagnostics Limited Methods of assay
JPS62245956A (en) * 1986-04-18 1987-10-27 Kuraray Co Ltd Production of isfet ph sensor having good water resistance
JPH0451786B2 (en) * 1986-04-18 1992-08-20 Kuraray Co
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture
JP2016045201A (en) * 2014-08-19 2016-04-04 ハネウェル・インターナショナル・インコーポレーテッド Prevention of stray current in sensor of conductive medium

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