JPS56133844A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56133844A
JPS56133844A JP3577380A JP3577380A JPS56133844A JP S56133844 A JPS56133844 A JP S56133844A JP 3577380 A JP3577380 A JP 3577380A JP 3577380 A JP3577380 A JP 3577380A JP S56133844 A JPS56133844 A JP S56133844A
Authority
JP
Japan
Prior art keywords
oxide film
donor
wall surface
oxidized
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3577380A
Other languages
Japanese (ja)
Other versions
JPS6117143B2 (en
Inventor
Toshinobu Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3577380A priority Critical patent/JPS56133844A/en
Publication of JPS56133844A publication Critical patent/JPS56133844A/en
Publication of JPS6117143B2 publication Critical patent/JPS6117143B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To increase integration by a method wherein a semiconductor device is provided with a portion difference in level and an element separating region is provided in that portion with difference in level. CONSTITUTION:A silicon substrate 14 is vertically etched through reactive ion etching with an oxide film as a mask. Next, proton is used for the ion injection to form a donor layer 19 in the portions other than a wall surface. Then anodic forming is added so as to form porous silicon 21 on the wall surface, and the porous silicon is oxidized through wet oxidation to make it into an oxide film. At this time, the donor region 19 receives the donor killer effect and returns to the P type substrate with its surface oxidized. After this, a gate oxide film and a polycrystalline electrode are formed, which is followed by patterning through photoetching. Next a source 25 and a drain 26 are formed, while an insulated film 27 between the layers and Al wiring 28 are provided. By so doing, the dimension of an element separating region can be reduced to ''0''.
JP3577380A 1980-03-22 1980-03-22 Semiconductor device Granted JPS56133844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3577380A JPS56133844A (en) 1980-03-22 1980-03-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3577380A JPS56133844A (en) 1980-03-22 1980-03-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56133844A true JPS56133844A (en) 1981-10-20
JPS6117143B2 JPS6117143B2 (en) 1986-05-06

Family

ID=12451194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3577380A Granted JPS56133844A (en) 1980-03-22 1980-03-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56133844A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386467A (en) * 1986-09-30 1988-04-16 Toshiba Corp Semiconductor device
JPH01235269A (en) * 1988-03-15 1989-09-20 Fujitsu Ltd Semiconductor device
JP2007294857A (en) * 2006-03-28 2007-11-08 Elpida Memory Inc Semiconductor device and manufacturing method therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386467A (en) * 1986-09-30 1988-04-16 Toshiba Corp Semiconductor device
JPH0330307B2 (en) * 1986-09-30 1991-04-26
JPH01235269A (en) * 1988-03-15 1989-09-20 Fujitsu Ltd Semiconductor device
JP2007294857A (en) * 2006-03-28 2007-11-08 Elpida Memory Inc Semiconductor device and manufacturing method therefor

Also Published As

Publication number Publication date
JPS6117143B2 (en) 1986-05-06

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