JPS5773974A - Manufacture of most type semiconductor device - Google Patents

Manufacture of most type semiconductor device

Info

Publication number
JPS5773974A
JPS5773974A JP14935180A JP14935180A JPS5773974A JP S5773974 A JPS5773974 A JP S5773974A JP 14935180 A JP14935180 A JP 14935180A JP 14935180 A JP14935180 A JP 14935180A JP S5773974 A JPS5773974 A JP S5773974A
Authority
JP
Japan
Prior art keywords
film
layer
recess
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14935180A
Other languages
Japanese (ja)
Inventor
Takashi Saigo
Akira Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14935180A priority Critical patent/JPS5773974A/en
Publication of JPS5773974A publication Critical patent/JPS5773974A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the disconnection of a wire and to suppress the variation in the threshold voltage by forming a recess on a part of a semiconductor substrate to isolate source and drain regions, forming a gate insulating film on the recess, laminating a polycrystalline Si layer and a nitrided layer on the overall surface, and performing a reactive ion etching. CONSTITUTION:A thick field oxidized film 43 is formed on the periphery of a P type Si substrate 41, ions are injected on an element region 42 surrounded by the film, and an n<+> type layer 44 is formed consequtively thereto by a heat treatment. Subsequently, a resist film 45 is coated on the overall surface, the film 45 is removed corresponding to the gate region, is then etched to form a recess intruded into the substrate 41, and source and drain regions 44a, 44b are formed at both sides. Thereafter, the film 45 is removed, a gate oxidized film 46 is newly covered, and a polycrystalline Si layer 47 and an Si3N4 film 48 are laminated thereon. Then, reactive ion etching is performed to remain at the gate electrode 47 made of the layer 47 only in the recess, and unnecessary layer 47 and the film 48 are removed.
JP14935180A 1980-10-27 1980-10-27 Manufacture of most type semiconductor device Pending JPS5773974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14935180A JPS5773974A (en) 1980-10-27 1980-10-27 Manufacture of most type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14935180A JPS5773974A (en) 1980-10-27 1980-10-27 Manufacture of most type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5773974A true JPS5773974A (en) 1982-05-08

Family

ID=15473217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14935180A Pending JPS5773974A (en) 1980-10-27 1980-10-27 Manufacture of most type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5773974A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999771A (en) * 1982-11-29 1984-06-08 Nec Corp Mos type semiconductor device and manufacture thereof
JPS60227475A (en) * 1984-04-25 1985-11-12 Mitsubishi Electric Corp Manufacture of mos type semiconductor device
US7787847B2 (en) * 2001-01-24 2010-08-31 St-Ericsson Sa Front end and high frequency receiver having quadrature low noise amplifier
CN103377904A (en) * 2012-04-28 2013-10-30 上海华虹Nec电子有限公司 Method for etching back polycrystalline silicon groove

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999771A (en) * 1982-11-29 1984-06-08 Nec Corp Mos type semiconductor device and manufacture thereof
JPS60227475A (en) * 1984-04-25 1985-11-12 Mitsubishi Electric Corp Manufacture of mos type semiconductor device
US7787847B2 (en) * 2001-01-24 2010-08-31 St-Ericsson Sa Front end and high frequency receiver having quadrature low noise amplifier
US8145176B2 (en) 2001-01-24 2012-03-27 St-Ericsson Sa Front end and high frequency receiver having quadrature low noise amplifier
CN103377904A (en) * 2012-04-28 2013-10-30 上海华虹Nec电子有限公司 Method for etching back polycrystalline silicon groove

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