JPS5534492A - Semiconductor integrated circuit device having mis field effect type transistor and its manufacture - Google Patents

Semiconductor integrated circuit device having mis field effect type transistor and its manufacture

Info

Publication number
JPS5534492A
JPS5534492A JP10801178A JP10801178A JPS5534492A JP S5534492 A JPS5534492 A JP S5534492A JP 10801178 A JP10801178 A JP 10801178A JP 10801178 A JP10801178 A JP 10801178A JP S5534492 A JPS5534492 A JP S5534492A
Authority
JP
Japan
Prior art keywords
layer
poly
drain
source
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10801178A
Other languages
Japanese (ja)
Inventor
Chisato Hashimoto
Kazuhide Kiuchi
Tetsuo Hosoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10801178A priority Critical patent/JPS5534492A/en
Publication of JPS5534492A publication Critical patent/JPS5534492A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To heighten integration density as well as to accelerate performance speed by arranging three dimentionally thru separation insulating layer, the MIST electrodes of gate, source and drain respectively being formed by poly Si, and the lead connecting each electrode metal.
CONSTITUTION: After establishing element region on the surface of p-type Si substrate 2 by forming thick SiO2 membrane 6 for separation purpose selectively thereon, gate insulation layer 8 and poly Si layer 16 are formed successively. Then, acid-proof masks 13W15 are selectively established, a part of Si layer 16 is removed by etching, and source 17 and drain 18 are provided within the substrate by ion impregnation. Poly Si layer 16 is acid treated leaving parts to become electrodes for gate 25, source 26 and drain 27 respectively, by which poly Si layer 16 is converted into SiO2 layer 29, and metal lead wires for gate 34, source 35 and drain 36 are connected to each poly Si electrode. Finally, insulating film 37 covering whole area is formed upon which lead 40 connecting drain lead is extended and provided.
COPYRIGHT: (C)1980,JPO&Japio
JP10801178A 1978-09-02 1978-09-02 Semiconductor integrated circuit device having mis field effect type transistor and its manufacture Pending JPS5534492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10801178A JPS5534492A (en) 1978-09-02 1978-09-02 Semiconductor integrated circuit device having mis field effect type transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10801178A JPS5534492A (en) 1978-09-02 1978-09-02 Semiconductor integrated circuit device having mis field effect type transistor and its manufacture

Publications (1)

Publication Number Publication Date
JPS5534492A true JPS5534492A (en) 1980-03-11

Family

ID=14473717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10801178A Pending JPS5534492A (en) 1978-09-02 1978-09-02 Semiconductor integrated circuit device having mis field effect type transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS5534492A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198256A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory
JPH0198255A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112193A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112193A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198256A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory
JPH0198255A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory

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