JPS5575242A - Method of forming through-hole - Google Patents
Method of forming through-holeInfo
- Publication number
- JPS5575242A JPS5575242A JP14900478A JP14900478A JPS5575242A JP S5575242 A JPS5575242 A JP S5575242A JP 14900478 A JP14900478 A JP 14900478A JP 14900478 A JP14900478 A JP 14900478A JP S5575242 A JPS5575242 A JP S5575242A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- integration
- semiconductor device
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the integration of a semiconductor device by providing through-holes in a conductive film in a simple step by a self-aligning process.
CONSTITUTION: The surface of source or drain region 207 formed on a p-type silicon substrate is coated with an oxide film 208 having the same thickness as a gate oxide film 204. The exposed surface of n+-type polysilicon electrodes 205, 206 is then treated at hich temperature in N2 atmosphere to be thus converted into an Si3N4 film 209. Then, when with the film 209 used as a mask the SiO2 film 208 is selectively etched by plasma, no undercut nor side etch occur thereat with the result that holes 210 for connecting the gate electrodes 205, 206 through exact insulation to the source or drain regions 207 can be formed in close contact with the gate electrodes in the insulating film 208. Thus, the position of the connecting hole 210 at the end of the gate electrode can be automatically precisely determined by determining the position of the polysilicon becoming the gate electrode so as to thereby improve the integration of a semiconductor device with multilayer wires.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14900478A JPS5575242A (en) | 1978-12-04 | 1978-12-04 | Method of forming through-hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14900478A JPS5575242A (en) | 1978-12-04 | 1978-12-04 | Method of forming through-hole |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5575242A true JPS5575242A (en) | 1980-06-06 |
Family
ID=15465549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14900478A Pending JPS5575242A (en) | 1978-12-04 | 1978-12-04 | Method of forming through-hole |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5575242A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100367497B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | Method for manufacturing contact hole in semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5222481A (en) * | 1975-08-14 | 1977-02-19 | Oki Electric Ind Co Ltd | Method of manufacturing semiconductor device |
| JPS5478681A (en) * | 1977-12-05 | 1979-06-22 | Nec Corp | Semiconductor device |
-
1978
- 1978-12-04 JP JP14900478A patent/JPS5575242A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5222481A (en) * | 1975-08-14 | 1977-02-19 | Oki Electric Ind Co Ltd | Method of manufacturing semiconductor device |
| JPS5478681A (en) * | 1977-12-05 | 1979-06-22 | Nec Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100367497B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | Method for manufacturing contact hole in semiconductor device |
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