JPS5552241A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5552241A
JPS5552241A JP12595778A JP12595778A JPS5552241A JP S5552241 A JPS5552241 A JP S5552241A JP 12595778 A JP12595778 A JP 12595778A JP 12595778 A JP12595778 A JP 12595778A JP S5552241 A JPS5552241 A JP S5552241A
Authority
JP
Japan
Prior art keywords
aluminum
film
plasma
silicon nitride
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12595778A
Other languages
Japanese (ja)
Inventor
Yasuo Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12595778A priority Critical patent/JPS5552241A/en
Publication of JPS5552241A publication Critical patent/JPS5552241A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To provide semiconductor devices comprising a conductor layer, a PCVD.Si3N4 film, and a wiring in which occurrence of inaccurate contact to the surface of the conductor exposed to the atmosphere where the PCVD.Si3N4 film is plasma-etched is prevented by providing a conductive oxide film over the conductor surface prior to the plasma-etching.
CONSTITUTION: On top of a silicon substrate 1 is formed a silicon oxide film 2, which is overlaid with aluminum 3 by evaporation. The surface of aluminum 3 is subjected to the anodic oxidation treatment to be converted to an alumina film 4, which is then partly and selectively removed to form a metallic wiring of aluminum, followed by growing a silicon nitride film 5 in accordance with the vapor growth process by plasma excitation. The silicon nitride film 5 is treated in a plasma of Freon to be selectively removed to form an opening 6, exposing the alumina film 4. The alumina film 4 is then removed out of the opening 6, resulting in exposing the aluminum layer 3. A wire 7 is bonded to the exposed aluminum layer 3. According to the above method, good contact can be produced between the wire 7 and the aluminum surface, since the aluminum surface as the electrode remains unexposed when the silicon nitride film is treated by the plasma etching.
COPYRIGHT: (C)1980,JPO&Japio
JP12595778A 1978-10-12 1978-10-12 Manufacture of semiconductor device Pending JPS5552241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12595778A JPS5552241A (en) 1978-10-12 1978-10-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12595778A JPS5552241A (en) 1978-10-12 1978-10-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5552241A true JPS5552241A (en) 1980-04-16

Family

ID=14923147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12595778A Pending JPS5552241A (en) 1978-10-12 1978-10-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5552241A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121363A (en) * 1984-11-16 1986-06-09 Nec Kansai Ltd Manufacture of semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121363A (en) * 1984-11-16 1986-06-09 Nec Kansai Ltd Manufacture of semiconductor

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