JPS5555547A - Method of forming electrode and wiring layer of semiconductor device - Google Patents

Method of forming electrode and wiring layer of semiconductor device

Info

Publication number
JPS5555547A
JPS5555547A JP12882178A JP12882178A JPS5555547A JP S5555547 A JPS5555547 A JP S5555547A JP 12882178 A JP12882178 A JP 12882178A JP 12882178 A JP12882178 A JP 12882178A JP S5555547 A JPS5555547 A JP S5555547A
Authority
JP
Japan
Prior art keywords
aluminum
wiring layer
layer
semiconductor device
forming electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12882178A
Other languages
Japanese (ja)
Other versions
JPS594858B2 (en
Inventor
Toshiki Suzuki
Teruhiko Yamazaki
Jun Uno
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12882178A priority Critical patent/JPS594858B2/en
Publication of JPS5555547A publication Critical patent/JPS5555547A/en
Publication of JPS594858B2 publication Critical patent/JPS594858B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To readily form aluminum electrodes and wiring layer of fine pattern by forming an aluminum coating layer containing oxide of high melting point compound on an aluminum surface layer.
CONSTITUTION: An insulating film 2 and an aluminum surface layer 3 are formed on the surface of a silicon semiconductor substrate 1 formed with a semiconductor active region 4. Then, an aluminum coated layer 5 is formed thereon, and a pattern 6 of photosensitive resin is formed thereon to thus execute gas plasma etching so as to obtain the electrode and wiring layer by the aluminum surface layer 3.
COPYRIGHT: (C)1980,JPO&Japio
JP12882178A 1978-10-17 1978-10-17 Method for forming electrodes and wiring layers in semiconductor devices Expired JPS594858B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12882178A JPS594858B2 (en) 1978-10-17 1978-10-17 Method for forming electrodes and wiring layers in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12882178A JPS594858B2 (en) 1978-10-17 1978-10-17 Method for forming electrodes and wiring layers in semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5555547A true JPS5555547A (en) 1980-04-23
JPS594858B2 JPS594858B2 (en) 1984-02-01

Family

ID=14994240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12882178A Expired JPS594858B2 (en) 1978-10-17 1978-10-17 Method for forming electrodes and wiring layers in semiconductor devices

Country Status (1)

Country Link
JP (1) JPS594858B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154027A (en) * 1983-02-21 1984-09-03 Mitsubishi Electric Corp Formation of metal pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154027A (en) * 1983-02-21 1984-09-03 Mitsubishi Electric Corp Formation of metal pattern

Also Published As

Publication number Publication date
JPS594858B2 (en) 1984-02-01

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