JPS5518041A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5518041A JPS5518041A JP9079178A JP9079178A JPS5518041A JP S5518041 A JPS5518041 A JP S5518041A JP 9079178 A JP9079178 A JP 9079178A JP 9079178 A JP9079178 A JP 9079178A JP S5518041 A JPS5518041 A JP S5518041A
- Authority
- JP
- Japan
- Prior art keywords
- film
- coated
- lower layer
- aluminum
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prevent the lower layer aluminum film wiring of a semiconductor device from excessively corroding by providing selectivity at the lower layer aluminum film when aluminum oxide film for insulating the lower layer aluminum film wiring is removed by gas plasma treatment.
CONSTITUTION: An insulator layer 3 having an opening 4 is coated on a semiconductor substrate 1 incorporating an element region 2 at the position corresponding to the opening 4. An aluminum film 5 is coated on the entire surface of the insulator layer 3, and a hybrid aluminum oxide film 6 is further coated on the film 5. Then, a lower layer wiring photoresist film 7a is coated on the desired surface area of the film 6, and the regions coated with no film 7a are converted into porous aluminum oxide films 8. Then, the film 7a is removed from the surface of the film 6, and silicon oxide film 9 is, for example, coated instead as inter-layer insulator film. Further, a photoresist film 7b having an opening pattern is coated on the surface of the film 9 to thereby chemically etch the film 9 so as to expose the film 6. Then, the film 6 is corroded to be removed through the opening by means of plasma treatment to thereby expose the surface of the lower layer aluminum film 5. Since the hybrid aluminum oxide film 6 is corroded several times faster than the films 5 and 9 at this time, it does not excessively corrode. Then, a metal film 11 is wired in contact with the film 5. Thus, the through hole opening treatment can be completed by only one photoresist film coating treatment.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079178A JPS5518041A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079178A JPS5518041A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5518041A true JPS5518041A (en) | 1980-02-07 |
Family
ID=14008402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9079178A Pending JPS5518041A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5518041A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58176439U (en) * | 1982-05-20 | 1983-11-25 | セイコーインスツルメンツ株式会社 | wristwatch radio |
| JPH0878256A (en) * | 1994-09-05 | 1996-03-22 | Kyosan Electric Mfg Co Ltd | Electromagnetic connector |
-
1978
- 1978-07-24 JP JP9079178A patent/JPS5518041A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58176439U (en) * | 1982-05-20 | 1983-11-25 | セイコーインスツルメンツ株式会社 | wristwatch radio |
| JPH0878256A (en) * | 1994-09-05 | 1996-03-22 | Kyosan Electric Mfg Co Ltd | Electromagnetic connector |
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