JPS5598827A - Manufacture of electrode of semiconductor device - Google Patents

Manufacture of electrode of semiconductor device

Info

Publication number
JPS5598827A
JPS5598827A JP498979A JP498979A JPS5598827A JP S5598827 A JPS5598827 A JP S5598827A JP 498979 A JP498979 A JP 498979A JP 498979 A JP498979 A JP 498979A JP S5598827 A JPS5598827 A JP S5598827A
Authority
JP
Japan
Prior art keywords
film
aluminum
copper
etched
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP498979A
Other languages
Japanese (ja)
Other versions
JPS5933253B2 (en
Inventor
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP498979A priority Critical patent/JPS5933253B2/en
Publication of JPS5598827A publication Critical patent/JPS5598827A/en
Publication of JPS5933253B2 publication Critical patent/JPS5933253B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To etch an aluminum film and an aluminum alloy film simultaneously and remove residues such as copper from the alloy film, by providing the easily plasma-etched aluminum film under the aluminum alloy film before etching the alloy film by plasma.
CONSTITUTION: Before an aluminum alloy film is etched by a plasma, a high-purity aluminum film 5 is coated at a small thickness of 500W1000Å on a semiconductor wafer 1 and an aluminum-copper alloy film 2 is produced on the aluminum film 5. A mask 3 of photoresist film is provided. The plasma etching is then effected by plasma reaction employing carbon tetrachloride. Copper remains on the film 5 when the upper film 2 is etched. However, the copper is removed together with the film 5 when the upper film 2 is etched. However, the copper is removed together with the film 5 by next etching. The mask 3 is then removed. As a result, a desired aluminum-copper alloy layer 6 is provided on the wafer 1. Thus, a good pattern can be made even on the aluminum-copper alloy film which is likely to be imperfectly etched.
COPYRIGHT: (C)1980,JPO&Japio
JP498979A 1979-01-20 1979-01-20 Method for forming electrodes in semiconductor devices Expired JPS5933253B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP498979A JPS5933253B2 (en) 1979-01-20 1979-01-20 Method for forming electrodes in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP498979A JPS5933253B2 (en) 1979-01-20 1979-01-20 Method for forming electrodes in semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5598827A true JPS5598827A (en) 1980-07-28
JPS5933253B2 JPS5933253B2 (en) 1984-08-14

Family

ID=11599008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP498979A Expired JPS5933253B2 (en) 1979-01-20 1979-01-20 Method for forming electrodes in semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5933253B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
US4919750A (en) * 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US5003373A (en) * 1987-11-30 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Structure of electrode junction for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
US4919750A (en) * 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US5003373A (en) * 1987-11-30 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Structure of electrode junction for semiconductor device

Also Published As

Publication number Publication date
JPS5933253B2 (en) 1984-08-14

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