JPS5598827A - Manufacture of electrode of semiconductor device - Google Patents
Manufacture of electrode of semiconductor deviceInfo
- Publication number
- JPS5598827A JPS5598827A JP498979A JP498979A JPS5598827A JP S5598827 A JPS5598827 A JP S5598827A JP 498979 A JP498979 A JP 498979A JP 498979 A JP498979 A JP 498979A JP S5598827 A JPS5598827 A JP S5598827A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum
- copper
- etched
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To etch an aluminum film and an aluminum alloy film simultaneously and remove residues such as copper from the alloy film, by providing the easily plasma-etched aluminum film under the aluminum alloy film before etching the alloy film by plasma.
CONSTITUTION: Before an aluminum alloy film is etched by a plasma, a high-purity aluminum film 5 is coated at a small thickness of 500W1000Å on a semiconductor wafer 1 and an aluminum-copper alloy film 2 is produced on the aluminum film 5. A mask 3 of photoresist film is provided. The plasma etching is then effected by plasma reaction employing carbon tetrachloride. Copper remains on the film 5 when the upper film 2 is etched. However, the copper is removed together with the film 5 when the upper film 2 is etched. However, the copper is removed together with the film 5 by next etching. The mask 3 is then removed. As a result, a desired aluminum-copper alloy layer 6 is provided on the wafer 1. Thus, a good pattern can be made even on the aluminum-copper alloy film which is likely to be imperfectly etched.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP498979A JPS5933253B2 (en) | 1979-01-20 | 1979-01-20 | Method for forming electrodes in semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP498979A JPS5933253B2 (en) | 1979-01-20 | 1979-01-20 | Method for forming electrodes in semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5598827A true JPS5598827A (en) | 1980-07-28 |
JPS5933253B2 JPS5933253B2 (en) | 1984-08-14 |
Family
ID=11599008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP498979A Expired JPS5933253B2 (en) | 1979-01-20 | 1979-01-20 | Method for forming electrodes in semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5933253B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335506A (en) * | 1980-08-04 | 1982-06-22 | International Business Machines Corporation | Method of forming aluminum/copper alloy conductors |
US4919750A (en) * | 1987-09-14 | 1990-04-24 | International Business Machines Corporation | Etching metal films with complexing chloride plasma |
US5003373A (en) * | 1987-11-30 | 1991-03-26 | Mitsubishi Denki Kabushiki Kaisha | Structure of electrode junction for semiconductor device |
-
1979
- 1979-01-20 JP JP498979A patent/JPS5933253B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335506A (en) * | 1980-08-04 | 1982-06-22 | International Business Machines Corporation | Method of forming aluminum/copper alloy conductors |
US4919750A (en) * | 1987-09-14 | 1990-04-24 | International Business Machines Corporation | Etching metal films with complexing chloride plasma |
US5003373A (en) * | 1987-11-30 | 1991-03-26 | Mitsubishi Denki Kabushiki Kaisha | Structure of electrode junction for semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5933253B2 (en) | 1984-08-14 |
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