JPS5555532A - Method of manufacturing semiconductor integrated circuit - Google Patents

Method of manufacturing semiconductor integrated circuit

Info

Publication number
JPS5555532A
JPS5555532A JP12798578A JP12798578A JPS5555532A JP S5555532 A JPS5555532 A JP S5555532A JP 12798578 A JP12798578 A JP 12798578A JP 12798578 A JP12798578 A JP 12798578A JP S5555532 A JPS5555532 A JP S5555532A
Authority
JP
Japan
Prior art keywords
photoresist
negative
positive
positive photoresist
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12798578A
Other languages
Japanese (ja)
Inventor
Tsunehiro Taguchi
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12798578A priority Critical patent/JPS5555532A/en
Publication of JPS5555532A publication Critical patent/JPS5555532A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To accurately process a negative pattern, by coating a negative photoresist on a silicon dioxide film on a substrate, coating a positive photoresist on the negative photoresist and using a positive pattern as a mask.
CONSTITUTION: A negative photoresist 102 and a positive photoresist 103 are coated on a silicon dioxide film 101 on a substrate 100. The positive photoresist 103 is develop-removed. The negative photoresist 102 is etched under an atmosphere of oxygen plasma by using the positive photoresist 103 as a mask. Gas etching is performed under an atmosphere of hydrogen fluoride gas to make an opening 104. Since the resolution of the positive photoresist 103 is higher than that of the negative photoresist 102, the positive photoresist is appropriate to make a fine pattern.
COPYRIGHT: (C)1980,JPO&Japio
JP12798578A 1978-10-18 1978-10-18 Method of manufacturing semiconductor integrated circuit Pending JPS5555532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12798578A JPS5555532A (en) 1978-10-18 1978-10-18 Method of manufacturing semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12798578A JPS5555532A (en) 1978-10-18 1978-10-18 Method of manufacturing semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5555532A true JPS5555532A (en) 1980-04-23

Family

ID=14973586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12798578A Pending JPS5555532A (en) 1978-10-18 1978-10-18 Method of manufacturing semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5555532A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006107942A1 (en) * 2005-04-05 2006-10-12 Analog Devices, Inc. Vapor hf etch process mask and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006107942A1 (en) * 2005-04-05 2006-10-12 Analog Devices, Inc. Vapor hf etch process mask and method

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