JPS6432632A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6432632A JPS6432632A JP18753287A JP18753287A JPS6432632A JP S6432632 A JPS6432632 A JP S6432632A JP 18753287 A JP18753287 A JP 18753287A JP 18753287 A JP18753287 A JP 18753287A JP S6432632 A JPS6432632 A JP S6432632A
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- film
- resist
- charged particles
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce a charge-up phenomenon by charged particles, and to obtain a pattern shape having high accuracy by transferring a resist pattern acquired by developing a resist after irradiation by charged particles to lower layers through etching in succession. CONSTITUTION:A first layer resin film 3, a second layer carbon film 4, a third layer resin film 5 having high etching resistance against oxygen and a fourth layer resist film 6 are applied successively onto a substrate 2 to be worked. Charged particles 7 are applied. The resist film 6 is developed, and a resist pattern 8 is acquired. The resin film 5 is etched, using the pattern 8 as a mask. The carbon film 4 and the resin film 3 are etched in an atmosphere containing oxygen gas, employing the resin film 5 as a mask. The substrate 2 is worked, using the carbon film 4 and the resin film 3 as masks. Accordingly, a charge-up phenomenon by charged particles is reduced, and a pattern shape having high accuracy is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18753287A JPS6432632A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18753287A JPS6432632A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6432632A true JPS6432632A (en) | 1989-02-02 |
Family
ID=16207733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18753287A Pending JPS6432632A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6432632A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6884670B2 (en) | 1993-07-16 | 2005-04-26 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
JP2005279923A (en) * | 2004-03-29 | 2005-10-13 | Northrop Grumman Corp | Micro electric machine system |
-
1987
- 1987-07-29 JP JP18753287A patent/JPS6432632A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6884670B2 (en) | 1993-07-16 | 2005-04-26 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
JP2005279923A (en) * | 2004-03-29 | 2005-10-13 | Northrop Grumman Corp | Micro electric machine system |
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