JPS6432632A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6432632A
JPS6432632A JP18753287A JP18753287A JPS6432632A JP S6432632 A JPS6432632 A JP S6432632A JP 18753287 A JP18753287 A JP 18753287A JP 18753287 A JP18753287 A JP 18753287A JP S6432632 A JPS6432632 A JP S6432632A
Authority
JP
Japan
Prior art keywords
resin film
film
resist
charged particles
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18753287A
Other languages
Japanese (ja)
Inventor
Fumio Murai
Hiroshi Shiraishi
Shinji Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18753287A priority Critical patent/JPS6432632A/en
Publication of JPS6432632A publication Critical patent/JPS6432632A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce a charge-up phenomenon by charged particles, and to obtain a pattern shape having high accuracy by transferring a resist pattern acquired by developing a resist after irradiation by charged particles to lower layers through etching in succession. CONSTITUTION:A first layer resin film 3, a second layer carbon film 4, a third layer resin film 5 having high etching resistance against oxygen and a fourth layer resist film 6 are applied successively onto a substrate 2 to be worked. Charged particles 7 are applied. The resist film 6 is developed, and a resist pattern 8 is acquired. The resin film 5 is etched, using the pattern 8 as a mask. The carbon film 4 and the resin film 3 are etched in an atmosphere containing oxygen gas, employing the resin film 5 as a mask. The substrate 2 is worked, using the carbon film 4 and the resin film 3 as masks. Accordingly, a charge-up phenomenon by charged particles is reduced, and a pattern shape having high accuracy is obtained.
JP18753287A 1987-07-29 1987-07-29 Manufacture of semiconductor device Pending JPS6432632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18753287A JPS6432632A (en) 1987-07-29 1987-07-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18753287A JPS6432632A (en) 1987-07-29 1987-07-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6432632A true JPS6432632A (en) 1989-02-02

Family

ID=16207733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18753287A Pending JPS6432632A (en) 1987-07-29 1987-07-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6432632A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884670B2 (en) 1993-07-16 2005-04-26 Fujitsu Limited Dry etching with reduced damage to MOS device
JP2005279923A (en) * 2004-03-29 2005-10-13 Northrop Grumman Corp Micro electric machine system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884670B2 (en) 1993-07-16 2005-04-26 Fujitsu Limited Dry etching with reduced damage to MOS device
JP2005279923A (en) * 2004-03-29 2005-10-13 Northrop Grumman Corp Micro electric machine system

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