JPS55157234A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55157234A JPS55157234A JP6547079A JP6547079A JPS55157234A JP S55157234 A JPS55157234 A JP S55157234A JP 6547079 A JP6547079 A JP 6547079A JP 6547079 A JP6547079 A JP 6547079A JP S55157234 A JPS55157234 A JP S55157234A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- oxide
- substance
- aluminum thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 abstract 6
- 239000010408 film Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To increase the plasma etching speed of oxide substance in a method of selectively etching a thin film by implanting ion to the entire surface of a thin film substance oxide layer formed on a thin film substance. CONSTITUTION:When a silicon oxide film 2 is formed on the surface of a silicon substrate 1 and aluminum thin film 3 is evaporated thereon, an oxide film 4 is natually formed in contact with air. Then, a photoresist pattern 5 is formed thereon, and ion 6 is implanted onto the surface of the oxide film 4 to weaken the binding strength with the film 4 so as to strengthen the binding strength with the pattern 5. Thereafter, the aluminum thin film 3 is etched with plasma gas 7 to isolate the photoresist mask 5 so as to wire the aluminum thin film 3'.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6547079A JPS55157234A (en) | 1979-05-25 | 1979-05-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6547079A JPS55157234A (en) | 1979-05-25 | 1979-05-25 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55157234A true JPS55157234A (en) | 1980-12-06 |
Family
ID=13288026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6547079A Pending JPS55157234A (en) | 1979-05-25 | 1979-05-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55157234A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4438556A (en) * | 1981-01-12 | 1984-03-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions |
JPS6132428A (en) * | 1984-07-24 | 1986-02-15 | Mitsubishi Electric Corp | Method for etching of complex structure |
US4863556A (en) * | 1985-09-30 | 1989-09-05 | Siemens Aktiengesellschaft | Method for transferring superfine photoresist structures |
US5350484A (en) * | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
JP2006234859A (en) * | 2005-02-22 | 2006-09-07 | Casio Comput Co Ltd | Liquid crystal element |
JP2009231424A (en) * | 2008-03-21 | 2009-10-08 | Dainippon Printing Co Ltd | Method of manufacturing semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5269576A (en) * | 1975-12-04 | 1977-06-09 | Siemens Ag | Method of making specified bevel angle at edge of etching |
JPS53125781A (en) * | 1977-04-08 | 1978-11-02 | Nec Corp | Manufacture for semiconductor device |
-
1979
- 1979-05-25 JP JP6547079A patent/JPS55157234A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5269576A (en) * | 1975-12-04 | 1977-06-09 | Siemens Ag | Method of making specified bevel angle at edge of etching |
JPS53125781A (en) * | 1977-04-08 | 1978-11-02 | Nec Corp | Manufacture for semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4438556A (en) * | 1981-01-12 | 1984-03-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions |
JPS6132428A (en) * | 1984-07-24 | 1986-02-15 | Mitsubishi Electric Corp | Method for etching of complex structure |
JPH0518458B2 (en) * | 1984-07-24 | 1993-03-12 | Mitsubishi Electric Corp | |
US4863556A (en) * | 1985-09-30 | 1989-09-05 | Siemens Aktiengesellschaft | Method for transferring superfine photoresist structures |
US5350484A (en) * | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
JP2006234859A (en) * | 2005-02-22 | 2006-09-07 | Casio Comput Co Ltd | Liquid crystal element |
JP2009231424A (en) * | 2008-03-21 | 2009-10-08 | Dainippon Printing Co Ltd | Method of manufacturing semiconductor device |
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