JPS6486558A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6486558A JPS6486558A JP24266187A JP24266187A JPS6486558A JP S6486558 A JPS6486558 A JP S6486558A JP 24266187 A JP24266187 A JP 24266187A JP 24266187 A JP24266187 A JP 24266187A JP S6486558 A JPS6486558 A JP S6486558A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polycrystalline
- silicon layer
- crystal silicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease the recombination current component in the emitter region of a bipolar transistor and substantially improve its performance by employing thin base and emitter regions. CONSTITUTION:Silicon ions are implanted into the surface of a substrate 6 coated completely with a polycrystalline silicon film 13 to form a noncrystalline area between the polycrystalline film 13 and an opening 12 of a semiconductor region 12. A single-crystal silicon layer 15 is treated in an H2 atmosphere at 700 degrees C and it is converted to a polycrystalline layer 16. The entire silicon layer, except a single-crystal silicon layer 16a on a base, is etched away, for example, by reactive ion etching using a resist mask. The single-crystal silicon layer left unetched is an emitter region. The layer 16a is heat-treated in an air atmosphere at 100 degrees C to form a 10Angstrom -thick oxide film 17 on it. Using a low-pressure chemical vapor growth method, the oxide layer 17 is coated with 1000Angstrom -thick polycrystalline layer 18 doped with As at 2.5X10<21>cm<-3>, and it is patterned.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62242661A JP2618921B2 (en) | 1987-09-29 | 1987-09-29 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62242661A JP2618921B2 (en) | 1987-09-29 | 1987-09-29 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6486558A true JPS6486558A (en) | 1989-03-31 |
JP2618921B2 JP2618921B2 (en) | 1997-06-11 |
Family
ID=17092359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62242661A Expired - Fee Related JP2618921B2 (en) | 1987-09-29 | 1987-09-29 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2618921B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02265246A (en) * | 1989-04-06 | 1990-10-30 | Nec Corp | Bipolar transistor |
JPH04329641A (en) * | 1991-04-30 | 1992-11-18 | Nec Ic Microcomput Syst Ltd | Npn bipolar transistor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638815A (en) * | 1979-09-07 | 1981-04-14 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS6191961A (en) * | 1984-10-12 | 1986-05-10 | Nec Corp | Manufacture of semiconductor device |
JPS6236866A (en) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-29 JP JP62242661A patent/JP2618921B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638815A (en) * | 1979-09-07 | 1981-04-14 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS6191961A (en) * | 1984-10-12 | 1986-05-10 | Nec Corp | Manufacture of semiconductor device |
JPS6236866A (en) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02265246A (en) * | 1989-04-06 | 1990-10-30 | Nec Corp | Bipolar transistor |
JPH04329641A (en) * | 1991-04-30 | 1992-11-18 | Nec Ic Microcomput Syst Ltd | Npn bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
JP2618921B2 (en) | 1997-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |