JPS6486558A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6486558A
JPS6486558A JP24266187A JP24266187A JPS6486558A JP S6486558 A JPS6486558 A JP S6486558A JP 24266187 A JP24266187 A JP 24266187A JP 24266187 A JP24266187 A JP 24266187A JP S6486558 A JPS6486558 A JP S6486558A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline
silicon layer
crystal silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24266187A
Other languages
Japanese (ja)
Other versions
JP2618921B2 (en
Inventor
Toshihiko Hamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62242661A priority Critical patent/JP2618921B2/en
Publication of JPS6486558A publication Critical patent/JPS6486558A/en
Application granted granted Critical
Publication of JP2618921B2 publication Critical patent/JP2618921B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the recombination current component in the emitter region of a bipolar transistor and substantially improve its performance by employing thin base and emitter regions. CONSTITUTION:Silicon ions are implanted into the surface of a substrate 6 coated completely with a polycrystalline silicon film 13 to form a noncrystalline area between the polycrystalline film 13 and an opening 12 of a semiconductor region 12. A single-crystal silicon layer 15 is treated in an H2 atmosphere at 700 degrees C and it is converted to a polycrystalline layer 16. The entire silicon layer, except a single-crystal silicon layer 16a on a base, is etched away, for example, by reactive ion etching using a resist mask. The single-crystal silicon layer left unetched is an emitter region. The layer 16a is heat-treated in an air atmosphere at 100 degrees C to form a 10Angstrom -thick oxide film 17 on it. Using a low-pressure chemical vapor growth method, the oxide layer 17 is coated with 1000Angstrom -thick polycrystalline layer 18 doped with As at 2.5X10<21>cm<-3>, and it is patterned.
JP62242661A 1987-09-29 1987-09-29 Method for manufacturing semiconductor device Expired - Fee Related JP2618921B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242661A JP2618921B2 (en) 1987-09-29 1987-09-29 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242661A JP2618921B2 (en) 1987-09-29 1987-09-29 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6486558A true JPS6486558A (en) 1989-03-31
JP2618921B2 JP2618921B2 (en) 1997-06-11

Family

ID=17092359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242661A Expired - Fee Related JP2618921B2 (en) 1987-09-29 1987-09-29 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2618921B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02265246A (en) * 1989-04-06 1990-10-30 Nec Corp Bipolar transistor
JPH04329641A (en) * 1991-04-30 1992-11-18 Nec Ic Microcomput Syst Ltd Npn bipolar transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638815A (en) * 1979-09-07 1981-04-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS6191961A (en) * 1984-10-12 1986-05-10 Nec Corp Manufacture of semiconductor device
JPS6236866A (en) * 1985-08-10 1987-02-17 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638815A (en) * 1979-09-07 1981-04-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS6191961A (en) * 1984-10-12 1986-05-10 Nec Corp Manufacture of semiconductor device
JPS6236866A (en) * 1985-08-10 1987-02-17 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02265246A (en) * 1989-04-06 1990-10-30 Nec Corp Bipolar transistor
JPH04329641A (en) * 1991-04-30 1992-11-18 Nec Ic Microcomput Syst Ltd Npn bipolar transistor

Also Published As

Publication number Publication date
JP2618921B2 (en) 1997-06-11

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees