JPS57106160A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS57106160A
JPS57106160A JP55181995A JP18199580A JPS57106160A JP S57106160 A JPS57106160 A JP S57106160A JP 55181995 A JP55181995 A JP 55181995A JP 18199580 A JP18199580 A JP 18199580A JP S57106160 A JPS57106160 A JP S57106160A
Authority
JP
Japan
Prior art keywords
base
diffused
photo
impurity concentration
initial stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55181995A
Other languages
Japanese (ja)
Inventor
Hideki Yasuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55181995A priority Critical patent/JPS57106160A/en
Publication of JPS57106160A publication Critical patent/JPS57106160A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Abstract

PURPOSE:To improve the characteristics of noises, and to form the IC, dielectric resistance thereof does not decrease, by forming a base or an emitter through ion implantation two times and making an amplification factor of a transistor at the initial stage larger than that of other transistors. CONSTITUTION:A buried layer is diffused into a P<-> type Si substrate 1, and an N<-> type Si layer 2 is grown in an epitaxial shape. The surface is oxidized and B is diffused selectively using an SiO2 film shaped as a mask, and a P<+> isolation layer 4 is formed. The surface is etched, a new SiO2 film is molded, and the base section is window-opened through photo-resist treatment. Boron ions are implanted at first. A window opened section at the initial stage side is coated with a make by a photo-resist, etc., and Boron ions are implanted twice. Boron is stretched out and diffused, and the base 8a having low impurity concentration and the base 8b having high impurity concentration are formed.
JP55181995A 1980-12-24 1980-12-24 Semiconductor integrated circuit device and manufacture thereof Pending JPS57106160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55181995A JPS57106160A (en) 1980-12-24 1980-12-24 Semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181995A JPS57106160A (en) 1980-12-24 1980-12-24 Semiconductor integrated circuit device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57106160A true JPS57106160A (en) 1982-07-01

Family

ID=16110477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181995A Pending JPS57106160A (en) 1980-12-24 1980-12-24 Semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57106160A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342695A2 (en) * 1988-05-20 1989-11-23 Fujitsu Limited Semiconductor device
FR2677171A1 (en) * 1991-05-31 1992-12-04 Sgs Thomson Microelectronics PREDETERMINED CURRENT GAIN TRANSISTOR IN AN INTEGRATED BIPOLAR CIRCUIT.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342695A2 (en) * 1988-05-20 1989-11-23 Fujitsu Limited Semiconductor device
US5151765A (en) * 1988-05-20 1992-09-29 Fujitsu Limited Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics
FR2677171A1 (en) * 1991-05-31 1992-12-04 Sgs Thomson Microelectronics PREDETERMINED CURRENT GAIN TRANSISTOR IN AN INTEGRATED BIPOLAR CIRCUIT.
EP0517623A2 (en) * 1991-05-31 1992-12-09 STMicroelectronics S.A. Transistor with a predetermined current gain in a bipolar integrated circuit
EP0517623A3 (en) * 1991-05-31 1994-08-10 Sgs Thomson Microelectronics Transistor with a predetermined current gain in a bipolar integrated circuit
US5481132A (en) * 1991-05-31 1996-01-02 Sgs-Thomson Microelectronics S.A. Transistor with a predetermined current gain in a bipolar integrated circuit

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