JPS5420679A - Bipolar mos semiconductor integrated circuit device and the same - Google Patents

Bipolar mos semiconductor integrated circuit device and the same

Info

Publication number
JPS5420679A
JPS5420679A JP8506577A JP8506577A JPS5420679A JP S5420679 A JPS5420679 A JP S5420679A JP 8506577 A JP8506577 A JP 8506577A JP 8506577 A JP8506577 A JP 8506577A JP S5420679 A JPS5420679 A JP S5420679A
Authority
JP
Japan
Prior art keywords
same
integrated circuit
semiconductor integrated
circuit device
mos semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8506577A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8506577A priority Critical patent/JPS5420679A/en
Publication of JPS5420679A publication Critical patent/JPS5420679A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the scale of integration and obtain low noise characteristics by forming bipolar and MOS elements on one semiconductor substrate by using multilayer epitaxial growth techniques in place of well regions through ion implantation.
JP8506577A 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same Pending JPS5420679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8506577A JPS5420679A (en) 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8506577A JPS5420679A (en) 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same

Publications (1)

Publication Number Publication Date
JPS5420679A true JPS5420679A (en) 1979-02-16

Family

ID=13848219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8506577A Pending JPS5420679A (en) 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same

Country Status (1)

Country Link
JP (1) JPS5420679A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158468A (en) * 1980-02-25 1981-12-07 Harris Corp Method of manufacturing itnegrated circuit
JPS59111355A (en) * 1982-12-17 1984-06-27 Nippon Precision Saakitsutsu Kk Semiconductor device
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0395665U (en) * 1990-11-15 1991-09-30

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158468A (en) * 1980-02-25 1981-12-07 Harris Corp Method of manufacturing itnegrated circuit
JPS59111355A (en) * 1982-12-17 1984-06-27 Nippon Precision Saakitsutsu Kk Semiconductor device
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0345548B2 (en) * 1983-07-08 1991-07-11 Matsushita Electronics Corp
JPH0395665U (en) * 1990-11-15 1991-09-30
JPH0534115Y2 (en) * 1990-11-15 1993-08-30

Similar Documents

Publication Publication Date Title
GB1357515A (en) Method for manufacturing an mos integrated circuit
JPS5230388A (en) Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS5438782A (en) Production of integrated circuit device
JPS5420679A (en) Bipolar mos semiconductor integrated circuit device and the same
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5413279A (en) Manufacture for semiconductor integrated circuit device
JPS544084A (en) Manufacture for semiconductor integrated circuit
JPS545392A (en) Semiconductor integrated circuit and its manufacture
JPS5214388A (en) Process for complementary insulated gate semiconductor integrated circuit device
JPS5339087A (en) Integrated circuit
JPS5286092A (en) Semiconductor integrated circuit
JPS5438779A (en) Semiconductor integrated circuit device
JPS5298485A (en) Semiconductor integrated circuit
JPS52109376A (en) Semiconductor integrated circuit
JPS5310282A (en) Production of mos type semiconductor integrated circuit
JPS52111387A (en) Complemented mos integrated circuit
JPS544085A (en) Semiconductor integrated circuit device and its manufacture
JPS52147083A (en) Semiconductor devices and integrated circuit using the same
JPS5253678A (en) Semiconductor integrated circuit and productin of the same
JPS53101988A (en) Semiconductor resistance device
JPS52142976A (en) Production of semiconductor integrated circuit device
JPS5384690A (en) Field effect transistor
JPS53102681A (en) Stabilizing method for self substrate bias level
JPS52133762A (en) Complementary type field effect semiconductor in tegrated circuit device
JPS53138283A (en) Manufacture of semiconductor integrated circuit