JPS5310282A - Production of mos type semiconductor integrated circuit - Google Patents

Production of mos type semiconductor integrated circuit

Info

Publication number
JPS5310282A
JPS5310282A JP8485076A JP8485076A JPS5310282A JP S5310282 A JPS5310282 A JP S5310282A JP 8485076 A JP8485076 A JP 8485076A JP 8485076 A JP8485076 A JP 8485076A JP S5310282 A JPS5310282 A JP S5310282A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
type semiconductor
semiconductor integrated
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8485076A
Other languages
Japanese (ja)
Other versions
JPS5931230B2 (en
Inventor
Takeshi Ishihara
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8485076A priority Critical patent/JPS5931230B2/en
Publication of JPS5310282A publication Critical patent/JPS5310282A/en
Publication of JPS5931230B2 publication Critical patent/JPS5931230B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To produce a MOSIC of a high breakdown voltage by selectively implanting phosphorus ions to a B-doped substrate surface and making a part of the source, drain of MOSFETs through selective oxidation.
COPYRIGHT: (C)1978,JPO&Japio
JP8485076A 1976-07-15 1976-07-15 Method for manufacturing MOS type semiconductor integrated circuit Expired JPS5931230B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8485076A JPS5931230B2 (en) 1976-07-15 1976-07-15 Method for manufacturing MOS type semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8485076A JPS5931230B2 (en) 1976-07-15 1976-07-15 Method for manufacturing MOS type semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5310282A true JPS5310282A (en) 1978-01-30
JPS5931230B2 JPS5931230B2 (en) 1984-07-31

Family

ID=13842263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8485076A Expired JPS5931230B2 (en) 1976-07-15 1976-07-15 Method for manufacturing MOS type semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5931230B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171975U (en) * 1984-04-24 1985-11-14 自動車電機工業株式会社 automotive fuel pump
US11164797B2 (en) 2018-02-15 2021-11-02 Fuji Electric Co., Ltd. Method of manufacturing semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171975U (en) * 1984-04-24 1985-11-14 自動車電機工業株式会社 automotive fuel pump
US11164797B2 (en) 2018-02-15 2021-11-02 Fuji Electric Co., Ltd. Method of manufacturing semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS5931230B2 (en) 1984-07-31

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