JPS5286088A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5286088A JPS5286088A JP244776A JP244776A JPS5286088A JP S5286088 A JPS5286088 A JP S5286088A JP 244776 A JP244776 A JP 244776A JP 244776 A JP244776 A JP 244776A JP S5286088 A JPS5286088 A JP S5286088A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- impulity
- amonalous
- concentrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To stop the generation of amonalous drain current by raising threshold voltage of parasitic MOS transistor by making insular semiconductor film whose impulity concentration for sloping part is more concentrated than other part on the insulative substrate and constructing semiconductor element on this film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP244776A JPS5286088A (en) | 1976-01-13 | 1976-01-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP244776A JPS5286088A (en) | 1976-01-13 | 1976-01-13 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5286088A true JPS5286088A (en) | 1977-07-16 |
Family
ID=11529521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP244776A Pending JPS5286088A (en) | 1976-01-13 | 1976-01-13 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5286088A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574164A (en) * | 1980-06-09 | 1982-01-09 | Nec Corp | Sos/mos transistor |
JPS63237574A (en) * | 1987-03-26 | 1988-10-04 | Nec Corp | Manufacture of mis semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50106591A (en) * | 1973-12-03 | 1975-08-22 | ||
JPS51101476A (en) * | 1975-03-04 | 1976-09-07 | Fujitsu Ltd | Handotaisochino seizohoho |
-
1976
- 1976-01-13 JP JP244776A patent/JPS5286088A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50106591A (en) * | 1973-12-03 | 1975-08-22 | ||
JPS51101476A (en) * | 1975-03-04 | 1976-09-07 | Fujitsu Ltd | Handotaisochino seizohoho |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574164A (en) * | 1980-06-09 | 1982-01-09 | Nec Corp | Sos/mos transistor |
JPS63237574A (en) * | 1987-03-26 | 1988-10-04 | Nec Corp | Manufacture of mis semiconductor device |
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