JPS52117582A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS52117582A
JPS52117582A JP3504376A JP3504376A JPS52117582A JP S52117582 A JPS52117582 A JP S52117582A JP 3504376 A JP3504376 A JP 3504376A JP 3504376 A JP3504376 A JP 3504376A JP S52117582 A JPS52117582 A JP S52117582A
Authority
JP
Japan
Prior art keywords
type semiconductor
mos type
semiconductor device
constituting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3504376A
Other languages
Japanese (ja)
Other versions
JPS605067B2 (en
Inventor
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3504376A priority Critical patent/JPS605067B2/en
Publication of JPS52117582A publication Critical patent/JPS52117582A/en
Publication of JPS605067B2 publication Critical patent/JPS605067B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To enable SOS,MOS type semiconductor having less variation in Vth and faster operational speed, by using the alloy containing larger part of semiconductor constituting the base than the drain electrode as the source electrode constituting material and shortening PN junction with this material.
COPYRIGHT: (C)1977,JPO&Japio
JP3504376A 1976-03-29 1976-03-29 MOS type semiconductor device Expired JPS605067B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3504376A JPS605067B2 (en) 1976-03-29 1976-03-29 MOS type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3504376A JPS605067B2 (en) 1976-03-29 1976-03-29 MOS type semiconductor device

Publications (2)

Publication Number Publication Date
JPS52117582A true JPS52117582A (en) 1977-10-03
JPS605067B2 JPS605067B2 (en) 1985-02-08

Family

ID=12431000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3504376A Expired JPS605067B2 (en) 1976-03-29 1976-03-29 MOS type semiconductor device

Country Status (1)

Country Link
JP (1) JPS605067B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
JPS56147480A (en) * 1980-04-18 1981-11-16 Toshiba Corp Semiconductor device and manufacture thereof
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1764346A1 (en) 2005-09-16 2007-03-21 Omya Development AG Process of preparing mineral material with particular ceria-containing zirconium oxide grinding beads, obtained products and their uses

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
JPS56147480A (en) * 1980-04-18 1981-11-16 Toshiba Corp Semiconductor device and manufacture thereof
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure

Also Published As

Publication number Publication date
JPS605067B2 (en) 1985-02-08

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