JPS52117582A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS52117582A JPS52117582A JP3504376A JP3504376A JPS52117582A JP S52117582 A JPS52117582 A JP S52117582A JP 3504376 A JP3504376 A JP 3504376A JP 3504376 A JP3504376 A JP 3504376A JP S52117582 A JPS52117582 A JP S52117582A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- mos type
- semiconductor device
- constituting
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To enable SOS,MOS type semiconductor having less variation in Vth and faster operational speed, by using the alloy containing larger part of semiconductor constituting the base than the drain electrode as the source electrode constituting material and shortening PN junction with this material.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3504376A JPS605067B2 (en) | 1976-03-29 | 1976-03-29 | MOS type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3504376A JPS605067B2 (en) | 1976-03-29 | 1976-03-29 | MOS type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52117582A true JPS52117582A (en) | 1977-10-03 |
JPS605067B2 JPS605067B2 (en) | 1985-02-08 |
Family
ID=12431000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3504376A Expired JPS605067B2 (en) | 1976-03-29 | 1976-03-29 | MOS type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS605067B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS543480A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS56147480A (en) * | 1980-04-18 | 1981-11-16 | Toshiba Corp | Semiconductor device and manufacture thereof |
US5264721A (en) * | 1989-04-29 | 1993-11-23 | Fujitsu Limited | Insulated-gate FET on an SOI-structure |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1764346A1 (en) | 2005-09-16 | 2007-03-21 | Omya Development AG | Process of preparing mineral material with particular ceria-containing zirconium oxide grinding beads, obtained products and their uses |
-
1976
- 1976-03-29 JP JP3504376A patent/JPS605067B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS543480A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS56147480A (en) * | 1980-04-18 | 1981-11-16 | Toshiba Corp | Semiconductor device and manufacture thereof |
US5264721A (en) * | 1989-04-29 | 1993-11-23 | Fujitsu Limited | Insulated-gate FET on an SOI-structure |
Also Published As
Publication number | Publication date |
---|---|
JPS605067B2 (en) | 1985-02-08 |
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