JPS56147480A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56147480A
JPS56147480A JP5042980A JP5042980A JPS56147480A JP S56147480 A JPS56147480 A JP S56147480A JP 5042980 A JP5042980 A JP 5042980A JP 5042980 A JP5042980 A JP 5042980A JP S56147480 A JPS56147480 A JP S56147480A
Authority
JP
Japan
Prior art keywords
drain
layer
source
insulating layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5042980A
Other languages
Japanese (ja)
Inventor
Yutaka Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5042980A priority Critical patent/JPS56147480A/en
Publication of JPS56147480A publication Critical patent/JPS56147480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain the highly integrated device characterized by small leakage currents by providing a source and a drain which are extended to the side surface on an island shaped semiconductor layer on an insulating layer, contacting the parts of the source and the drain to the insulating layer, and forming a gate electrode on the island shaped layer via an insulating film. CONSTITUTION:An island shaped Si layer 2 is formed on the insulating layer 1. A gate region is masked by poly Si 7. As ions are implanted, and an N type source 5, a drain 6, and an As implanted layer 16 are formed. Then, thin Al film mask 17 is provided. After H<+> ion beams are irradiated, the Al mask 17 is removed. Heat treatment is performed, and the source and the drain are extended to the lower insulating film by quick diffusion. The gate insulating film and various electrodes are formed by a conventional method. The insulating layer can be an embedded insulating layer, sapphire, and the like. In this constitution, the leakage current between the source and drain is small, erroneous operation is not caused, and the high performance device can be obtained without reducing high integrating density.
JP5042980A 1980-04-18 1980-04-18 Semiconductor device and manufacture thereof Pending JPS56147480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5042980A JPS56147480A (en) 1980-04-18 1980-04-18 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5042980A JPS56147480A (en) 1980-04-18 1980-04-18 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56147480A true JPS56147480A (en) 1981-11-16

Family

ID=12858615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5042980A Pending JPS56147480A (en) 1980-04-18 1980-04-18 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56147480A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786955A (en) * 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120256A (en) * 1974-03-05 1975-09-20
JPS51103778A (en) * 1975-03-10 1976-09-13 Nippon Telegraph & Telephone Handotaisochito sonoseizohoho
JPS5296871A (en) * 1976-02-10 1977-08-15 Matsushita Electric Ind Co Ltd Manufacture of mos type transistor
JPS52117582A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Mos type semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120256A (en) * 1974-03-05 1975-09-20
JPS51103778A (en) * 1975-03-10 1976-09-13 Nippon Telegraph & Telephone Handotaisochito sonoseizohoho
JPS5296871A (en) * 1976-02-10 1977-08-15 Matsushita Electric Ind Co Ltd Manufacture of mos type transistor
JPS52117582A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Mos type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786955A (en) * 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same

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