JPS56110265A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS56110265A
JPS56110265A JP1157080A JP1157080A JPS56110265A JP S56110265 A JPS56110265 A JP S56110265A JP 1157080 A JP1157080 A JP 1157080A JP 1157080 A JP1157080 A JP 1157080A JP S56110265 A JPS56110265 A JP S56110265A
Authority
JP
Japan
Prior art keywords
region
irradiated
ion beam
diffusion
electroconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1157080A
Other languages
Japanese (ja)
Inventor
Yutaka Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1157080A priority Critical patent/JPS56110265A/en
Publication of JPS56110265A publication Critical patent/JPS56110265A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To arrange so that a lamination density may be high, by forming a deep counter-electroconductive-type region in a part where high voltage is applied inside a seamed part formed by a semiconductor substrate and a counter-electroconductive- type region. CONSTITUTION:A silicon oxidization film 33 and a gate oxidization film 32 are formed on a P type semiconductor substrate 30, and a source equivalent region 34 and a drain equivament region 35 are formed by injecting or diffusing impurities. Next, the curvature of a seam is increased by providing an aluminum film 37 and increasing the depth rate of a seam, so that a part excepting a diffusion region where compression is increased is coated. Following this procedure, an ion beam is irradiated to form an injection layer 38 and an aluminum film 33 is removed to perform diffusion through thermal treatment. A region 39 to which an ion beam is irradiated has a deeper diffusion layer than a region to which an ion beam is not irradiated. Further the formed curvature of the former is larger than that of the latter.
JP1157080A 1980-02-04 1980-02-04 Semiconductor device and its manufacture Pending JPS56110265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1157080A JPS56110265A (en) 1980-02-04 1980-02-04 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1157080A JPS56110265A (en) 1980-02-04 1980-02-04 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS56110265A true JPS56110265A (en) 1981-09-01

Family

ID=11781578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1157080A Pending JPS56110265A (en) 1980-02-04 1980-02-04 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS56110265A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066459A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device
EP0778620A3 (en) * 1995-12-07 1997-12-29 Kabushiki Kaisha Toshiba Vertical MOS type semiconductor device
JP2008214912A (en) * 2007-03-01 2008-09-18 Nbc Kk Guide rail setting tool for electric dolly type sliding door and guide rail setting method using the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066459A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device
JPH065710B2 (en) * 1983-09-21 1994-01-19 セイコーエプソン株式会社 Semiconductor device
EP0778620A3 (en) * 1995-12-07 1997-12-29 Kabushiki Kaisha Toshiba Vertical MOS type semiconductor device
US6002153A (en) * 1995-12-07 1999-12-14 Kabushiki Kaisha Toshiba MOS type semiconductor device with a current detecting function
JP2008214912A (en) * 2007-03-01 2008-09-18 Nbc Kk Guide rail setting tool for electric dolly type sliding door and guide rail setting method using the same

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