JPS56142671A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56142671A
JPS56142671A JP4469780A JP4469780A JPS56142671A JP S56142671 A JPS56142671 A JP S56142671A JP 4469780 A JP4469780 A JP 4469780A JP 4469780 A JP4469780 A JP 4469780A JP S56142671 A JPS56142671 A JP S56142671A
Authority
JP
Japan
Prior art keywords
source
layer
drain regions
drain
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4469780A
Other languages
Japanese (ja)
Inventor
Akira Morikuri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4469780A priority Critical patent/JPS56142671A/en
Publication of JPS56142671A publication Critical patent/JPS56142671A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To obtain a semiconductor device having a preferable electric characteristic with less leakage current by annealing the source and drain regions formed by ion implantation with laser light. CONSTITUTION:An oxide layer 3 and a resist layer 4 are sequentially formed on the main surface of a semiconductor substrate 2, and resist layers on the region where source and drain region are to be formed of an MOS transistor are removed. With the residual resist layer 4 as a mask source and drain regions 5, 6 are formed in a semiconductor substrae 2 by ion implantation through the layer 3 coated on the substrate 2. Then, the layer 4 is removed, laser light is incident thereto to anneal it. Subsequently, the oxide layers on the source and the drain regions 5, 6 are removed, and then source, drain and gate wires are formed.
JP4469780A 1980-04-07 1980-04-07 Manufacture of semiconductor device Pending JPS56142671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4469780A JPS56142671A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4469780A JPS56142671A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56142671A true JPS56142671A (en) 1981-11-07

Family

ID=12698601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4469780A Pending JPS56142671A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142671A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334938A (en) * 2001-03-09 2002-11-22 Fujitsu Ltd Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334938A (en) * 2001-03-09 2002-11-22 Fujitsu Ltd Semiconductor device and method of manufacturing the same

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