JPS6447076A - Manufacture of mos type thin film transistor - Google Patents
Manufacture of mos type thin film transistorInfo
- Publication number
- JPS6447076A JPS6447076A JP20553787A JP20553787A JPS6447076A JP S6447076 A JPS6447076 A JP S6447076A JP 20553787 A JP20553787 A JP 20553787A JP 20553787 A JP20553787 A JP 20553787A JP S6447076 A JPS6447076 A JP S6447076A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- halogen
- gate oxide
- implantation
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 229910052736 halogen Inorganic materials 0.000 abstract 7
- 150000002367 halogens Chemical class 0.000 abstract 5
- 238000002513 implantation Methods 0.000 abstract 4
- -1 halogen ions Chemical class 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000012298 atmosphere Substances 0.000 abstract 2
- 238000005247 gettering Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To acquire sufficient gettering effect and to make it easy to control a halogen implantation amount, by implanting halogen ions after formation of a gate oxide film or an Si semiconductor film for a gate. CONSTITUTION:An Si semiconductor active layer 2 is formed on an insulating substrate 1 and the surface thereof is oxided at dry O2 atmosphere without halogen or O2-vapor atmosphere to form a gate oxide film 3. Ions are implanted by more than two steps within an implantation energy range of 50keV-200keV by more than two steps with a gross implantation amount of 1X10<13>/cm so that enough halogen ion such as Cl<+>, F<+> is introduced into a gate oxide film, gate oxide film active layer interface and an active layer. Then a halogen ion implantation layer 13 is formed by conducting activation at 1000 deg.C for 30min at N2 atmosphere and an Si semiconductor film 4 for gate is formed onto the entire surface of an oxide film 3. Since halogen ion implantation is applied from the side of the gate oxide film, enough gettering effect can be obtained thus increasing reliability of a transistor and also realizing easy controlling of halogen implantation amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20553787A JPS6447076A (en) | 1987-08-18 | 1987-08-18 | Manufacture of mos type thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20553787A JPS6447076A (en) | 1987-08-18 | 1987-08-18 | Manufacture of mos type thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6447076A true JPS6447076A (en) | 1989-02-21 |
Family
ID=16508532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20553787A Pending JPS6447076A (en) | 1987-08-18 | 1987-08-18 | Manufacture of mos type thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6447076A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02280380A (en) * | 1989-04-20 | 1990-11-16 | Mitsubishi Electric Corp | Semiconductor device |
| US6429483B1 (en) | 1994-06-09 | 2002-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6486495B2 (en) | 1990-07-24 | 2002-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
-
1987
- 1987-08-18 JP JP20553787A patent/JPS6447076A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02280380A (en) * | 1989-04-20 | 1990-11-16 | Mitsubishi Electric Corp | Semiconductor device |
| US6486495B2 (en) | 1990-07-24 | 2002-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US7026200B2 (en) | 1990-07-24 | 2006-04-11 | Semiconductor Energy Laboratory Co. Ltd. | Method for manufacturing a semiconductor device |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US6429483B1 (en) | 1994-06-09 | 2002-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US8330165B2 (en) | 1994-06-09 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7838968B2 (en) | 1996-04-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
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