JPS57102073A - Semiconductor memory and manufacture thereof - Google Patents

Semiconductor memory and manufacture thereof

Info

Publication number
JPS57102073A
JPS57102073A JP17824680A JP17824680A JPS57102073A JP S57102073 A JPS57102073 A JP S57102073A JP 17824680 A JP17824680 A JP 17824680A JP 17824680 A JP17824680 A JP 17824680A JP S57102073 A JPS57102073 A JP S57102073A
Authority
JP
Japan
Prior art keywords
region
film
substrate
conductive type
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17824680A
Other languages
Japanese (ja)
Inventor
Masashi Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17824680A priority Critical patent/JPS57102073A/en
Publication of JPS57102073A publication Critical patent/JPS57102073A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a memory which can be written, by a method wherein a region, which is of the same conductive type as that of a substrate and has a high impurity concentration, is formed at a gate side of a drain region. CONSTITUTION:A floating gate 4 and a control gate 6, which are made of a polycrystalline silicon film, are formed through the medium of silicon oxidizing film 11 to fill a drain region C with an impurity being of the same conductive type as that of the substrate 1, and this forms region 12a extending under the oxidizing film 3. After the regist film 11 is removed, an impurity, being of an inverse conductive type to that of the substrate 1, is induced to regions B and C by a heat dispersion or an ion implantation to form regions 7 and 8. Then, the dispersion of the region 12a advance further to form a region 12b. Thus, when wrighting an electric field concentrates at the lower part of the silicon oxidizing film 3 of the region 12b, and thereby electrons can be stored in a gate without applying an excessive voltage.
JP17824680A 1980-12-16 1980-12-16 Semiconductor memory and manufacture thereof Pending JPS57102073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17824680A JPS57102073A (en) 1980-12-16 1980-12-16 Semiconductor memory and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17824680A JPS57102073A (en) 1980-12-16 1980-12-16 Semiconductor memory and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57102073A true JPS57102073A (en) 1982-06-24

Family

ID=16045136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17824680A Pending JPS57102073A (en) 1980-12-16 1980-12-16 Semiconductor memory and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57102073A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4861730A (en) * 1988-01-25 1989-08-29 Catalyst Semiconductor, Inc. Process for making a high density split gate nonvolatile memory cell
US5117269A (en) * 1989-03-09 1992-05-26 Sgs-Thomson Microelectronics S.R.L. Eprom memory array with crosspoint configuration
US5346842A (en) * 1992-02-04 1994-09-13 National Semiconductor Corporation Method of making alternate metal/source virtual ground flash EPROM cell array
US5482880A (en) * 1991-08-30 1996-01-09 Texas Instruments Incorporated Non-volatile memory cell and fabrication method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4861730A (en) * 1988-01-25 1989-08-29 Catalyst Semiconductor, Inc. Process for making a high density split gate nonvolatile memory cell
US5117269A (en) * 1989-03-09 1992-05-26 Sgs-Thomson Microelectronics S.R.L. Eprom memory array with crosspoint configuration
US5482880A (en) * 1991-08-30 1996-01-09 Texas Instruments Incorporated Non-volatile memory cell and fabrication method
US5346842A (en) * 1992-02-04 1994-09-13 National Semiconductor Corporation Method of making alternate metal/source virtual ground flash EPROM cell array
US5464999A (en) * 1992-02-04 1995-11-07 National Semiconductor Corporation Method for programming an alternate metal/source virtual ground flash EPROM cell array

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