JPS5518042A - Method of fabricating semiconductor device - Google Patents

Abstract

PURPOSE: To accurately position an isolation region between a P⁺ impurity region and source, drain regions in a semiconductor device by forming the insulating film of the isolation region by a mask formed by means of an ion implantation for forming the P⁺ impurity region.

CONSTITUTION: A silicon oxide film 2 is formed on a semiconductor substrate 1, and a silicon nitride film 3 is further coated on the film 2. Then, a P⁺ impurity region and an active region are coated by photoresist 4 to thereby remove the film 3 in the isolation region 13. After the photoresist 4 is then removed, a silicon oxide film 14 is formed thereon. Then, source, drain and gate regions are coated by photoresist 4 to thereby sequentially remove the films 3 and 2. Then, an ion is implanted with resist 4' and film 14 as mask, and the resist 4' is then removed. Thereafter, a P⁺ impurity region 5 and a field oxide film 6 are formed by heat treatment, and the films 3 and 2 are then sequentially removed. Then, a gate oxide film 7 and a poly-silicon electrode 8 are formed. Then, source and drain diffused layers 9 and 10 are formed with the films 6, 8 as mask. Thus, it becomes unnecessary to position the mask between the film 14 and the resist 4 to thereby accurately position the isolation region therebetween.

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