JPS53144687A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53144687A
JPS53144687A JP6017977A JP6017977A JPS53144687A JP S53144687 A JPS53144687 A JP S53144687A JP 6017977 A JP6017977 A JP 6017977A JP 6017977 A JP6017977 A JP 6017977A JP S53144687 A JPS53144687 A JP S53144687A
Authority
JP
Japan
Prior art keywords
oxide film
production
semiconductor device
polycrystalline layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6017977A
Other languages
Japanese (ja)
Inventor
Shigero Kuninobu
Takeshi Ishihara
Atsushi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6017977A priority Critical patent/JPS53144687A/en
Publication of JPS53144687A publication Critical patent/JPS53144687A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To flatten the surface by depositing a polycrystalline layer containing an impurity on a semiconductor substrate through an oxide film mask, forming shallow source, drain regions through heat treatment, thereafter selectively removing the polycrystalline layer, forming transit regions through ion implantation and burying the recesses with an oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP6017977A 1977-05-23 1977-05-23 Production of semiconductor device Pending JPS53144687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6017977A JPS53144687A (en) 1977-05-23 1977-05-23 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6017977A JPS53144687A (en) 1977-05-23 1977-05-23 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53144687A true JPS53144687A (en) 1978-12-16

Family

ID=13134657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6017977A Pending JPS53144687A (en) 1977-05-23 1977-05-23 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53144687A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941870A (en) * 1982-08-25 1984-03-08 Toshiba Corp Manufacture of semiconductor device
US5422289A (en) * 1992-04-27 1995-06-06 National Semiconductor Corporation Method of manufacturing a fully planarized MOSFET and resulting structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941870A (en) * 1982-08-25 1984-03-08 Toshiba Corp Manufacture of semiconductor device
JPH0576177B2 (en) * 1982-08-25 1993-10-22 Tokyo Shibaura Electric Co
US5422289A (en) * 1992-04-27 1995-06-06 National Semiconductor Corporation Method of manufacturing a fully planarized MOSFET and resulting structure

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