JPS5329668A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5329668A JPS5329668A JP10458776A JP10458776A JPS5329668A JP S5329668 A JPS5329668 A JP S5329668A JP 10458776 A JP10458776 A JP 10458776A JP 10458776 A JP10458776 A JP 10458776A JP S5329668 A JPS5329668 A JP S5329668A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- ohmic contact
- amorphous
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make the surface of the regions for obtaining ohmic contact with Al amorphous by ion implantation and obtain ohmic contact through the thin amorphous layer thus obtained.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10458776A JPS5329668A (en) | 1976-08-31 | 1976-08-31 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10458776A JPS5329668A (en) | 1976-08-31 | 1976-08-31 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5329668A true JPS5329668A (en) | 1978-03-20 |
Family
ID=14384558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10458776A Pending JPS5329668A (en) | 1976-08-31 | 1976-08-31 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5329668A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5394177A (en) * | 1977-01-28 | 1978-08-17 | Nippon Precision Circuits | Semiconductor and method of producing same |
JPS607126A (en) * | 1983-06-27 | 1985-01-14 | Toshiba Corp | Manufacture of semiconductor device |
-
1976
- 1976-08-31 JP JP10458776A patent/JPS5329668A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5394177A (en) * | 1977-01-28 | 1978-08-17 | Nippon Precision Circuits | Semiconductor and method of producing same |
JPS607126A (en) * | 1983-06-27 | 1985-01-14 | Toshiba Corp | Manufacture of semiconductor device |
JPH0510820B2 (en) * | 1983-06-27 | 1993-02-10 | Tokyo Shibaura Electric Co |
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