JPS5363986A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5363986A
JPS5363986A JP13999476A JP13999476A JPS5363986A JP S5363986 A JPS5363986 A JP S5363986A JP 13999476 A JP13999476 A JP 13999476A JP 13999476 A JP13999476 A JP 13999476A JP S5363986 A JPS5363986 A JP S5363986A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
impurity
source
drain regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13999476A
Other languages
Japanese (ja)
Inventor
Shigero Kuninobu
Takeshi Ishihara
Atsushi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13999476A priority Critical patent/JPS5363986A/en
Publication of JPS5363986A publication Critical patent/JPS5363986A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To flatten element surface and avert the disconnection of metal wirings by providing gate insulation films having openings corresponding to source, drain regions on a semiconductor substrate, growing a polycrystalline layer containing an impurity thereon and diffusing the impurity into the source, drain regions from said layer.
COPYRIGHT: (C)1978,JPO&Japio
JP13999476A 1976-11-19 1976-11-19 Production of semiconductor device Pending JPS5363986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13999476A JPS5363986A (en) 1976-11-19 1976-11-19 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13999476A JPS5363986A (en) 1976-11-19 1976-11-19 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5363986A true JPS5363986A (en) 1978-06-07

Family

ID=15258451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13999476A Pending JPS5363986A (en) 1976-11-19 1976-11-19 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5363986A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166048A (en) * 1981-04-06 1982-10-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit
JPS60198862A (en) * 1984-03-23 1985-10-08 Nec Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166048A (en) * 1981-04-06 1982-10-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit
JPS60198862A (en) * 1984-03-23 1985-10-08 Nec Corp Semiconductor integrated circuit device

Similar Documents

Publication Publication Date Title
JPS5324277A (en) Semiconductor devic e and its production
JPS52156580A (en) Semiconductor integrated circuit device and its production
JPS5378183A (en) Manufacture of semiconductor device
JPS5363986A (en) Production of semiconductor device
JPS5339084A (en) Silicon gate mis semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS53144686A (en) Production of semiconductor device
JPS5317068A (en) Semiconductor device and its production
JPS531471A (en) Manufacture for semiconductor device
JPS51113461A (en) A method for manufacturing semiconductor devices
JPS53105385A (en) Manufacture for semiconductor
JPS52123879A (en) Mos type semiconductor device and its production
JPS52120776A (en) Semiconductor device
JPS52153373A (en) Preparation of semiconductor device
JPS53144687A (en) Production of semiconductor device
JPS53101977A (en) Diffusion method of inpurity to semiconductor substrate
JPS53129982A (en) Production of mos type semiconductor devices
JPS5317283A (en) Production of semiconductor device
JPS5347781A (en) Production of silicon gate semiconductor device
JPS52113688A (en) Production of semiconductor device
JPS52125285A (en) Semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5379377A (en) Production of semiconductor device
JPS5370775A (en) Production of semiconductor device
JPS5447490A (en) Production of semiconductor device