JPS5378183A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5378183A
JPS5378183A JP15535076A JP15535076A JPS5378183A JP S5378183 A JPS5378183 A JP S5378183A JP 15535076 A JP15535076 A JP 15535076A JP 15535076 A JP15535076 A JP 15535076A JP S5378183 A JPS5378183 A JP S5378183A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
layer
polycrystalline
flank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15535076A
Other languages
Japanese (ja)
Other versions
JPS5525499B2 (en
Inventor
Hirohei Kawakami
Takeya Ezaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15535076A priority Critical patent/JPS5378183A/en
Publication of JPS5378183A publication Critical patent/JPS5378183A/en
Publication of JPS5525499B2 publication Critical patent/JPS5525499B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: On a semiconductor substrate, a polycrystalline Si film is selectively formed and only the flank of the layer is oxidized to obtain a SiO2 layer; leaving only this, polycrystalline Si is removed and then an epitaxial layer is grown on the entire surface to provide a PN junction there, so that the highly-concentrated transistor can be obtained.
COPYRIGHT: (C)1978,JPO&Japio
JP15535076A 1976-12-22 1976-12-22 Manufacture of semiconductor device Granted JPS5378183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15535076A JPS5378183A (en) 1976-12-22 1976-12-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15535076A JPS5378183A (en) 1976-12-22 1976-12-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5378183A true JPS5378183A (en) 1978-07-11
JPS5525499B2 JPS5525499B2 (en) 1980-07-07

Family

ID=15603962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15535076A Granted JPS5378183A (en) 1976-12-22 1976-12-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378183A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115846A (en) * 1981-12-28 1983-07-09 Matsushita Electric Ind Co Ltd Complementary insulated gate semiconductor device
JPS6024055A (en) * 1983-07-20 1985-02-06 Toshiba Corp Manufacture of complementary type semiconductor device
JPS6070757A (en) * 1983-09-28 1985-04-22 Hitachi Ltd Semiconductor integrated circuit
JPS61128555A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Semiconductor device
JPH0289358A (en) * 1988-09-27 1990-03-29 Nec Corp Complementary mis integrated circuit

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138304A (en) * 1982-02-12 1983-08-17 株式会社クボタ Earth working vehicle
JPS5911105A (en) * 1982-07-09 1984-01-20 ヤンマーディーゼル株式会社 Apparatus for controlling working angle in agricultural tractor
JPS5987211U (en) * 1982-12-02 1984-06-13 株式会社クボタ Seedling planting device connection structure in rice transplanter
JPS59110511U (en) * 1983-01-18 1984-07-25 株式会社クボタ Work equipment connection device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50149284A (en) * 1974-05-20 1975-11-29

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50149284A (en) * 1974-05-20 1975-11-29

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115846A (en) * 1981-12-28 1983-07-09 Matsushita Electric Ind Co Ltd Complementary insulated gate semiconductor device
JPS6024055A (en) * 1983-07-20 1985-02-06 Toshiba Corp Manufacture of complementary type semiconductor device
JPH0527264B2 (en) * 1983-07-20 1993-04-20 Tokyo Shibaura Electric Co
JPS6070757A (en) * 1983-09-28 1985-04-22 Hitachi Ltd Semiconductor integrated circuit
JPH0527267B2 (en) * 1983-09-28 1993-04-20 Hitachi Ltd
JPS61128555A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Semiconductor device
JPH0289358A (en) * 1988-09-27 1990-03-29 Nec Corp Complementary mis integrated circuit

Also Published As

Publication number Publication date
JPS5525499B2 (en) 1980-07-07

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