JPS6070757A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6070757A
JPS6070757A JP17795783A JP17795783A JPS6070757A JP S6070757 A JPS6070757 A JP S6070757A JP 17795783 A JP17795783 A JP 17795783A JP 17795783 A JP17795783 A JP 17795783A JP S6070757 A JPS6070757 A JP S6070757A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
region
type
shaped
projecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17795783A
Other versions
JPH0527267B2 (en )
Inventor
Hideo Sunami
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Abstract

PURPOSE:To increase the density of a CMOS integrated circuit by oppositely forming a P well and an N well and separating both wells by a thin insulating region. CONSTITUTION:An N<+> region 15 and a P<+> region 16 are formed to an N type Si substrate 10, and an epitaxial layer 17 is grown. Projecting columns 18 and 19 are formed through dry etching, and the ions of a P type dopant and an N type dopant are implanted to each column, and a P type projecting column 18 and an N type projecting column 19 are shaped. A thermal oxide film and an isolation insulating film 20 betweend both projecting columns through a CVD method are formed, a field oxide film 21 is shaped in an isolation region, and a gate oxide film 21 is further formed. Each crystal Si and a film made of a refractory metal, etc. are applied on the whole, and dry etching having strong directional properties is executed to the whole. An inter-layer insulating film 22 is applied, a connecting hole 24 is formed to a desired section, and electrodes 231-233 made of Al, etc. are shaped.
JP17795783A 1983-09-28 1983-09-28 Expired - Lifetime JPH0527267B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17795783A JPH0527267B2 (en) 1983-09-28 1983-09-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17795783A JPH0527267B2 (en) 1983-09-28 1983-09-28

Publications (2)

Publication Number Publication Date
JPS6070757A true true JPS6070757A (en) 1985-04-22
JPH0527267B2 JPH0527267B2 (en) 1993-04-20

Family

ID=16040033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17795783A Expired - Lifetime JPH0527267B2 (en) 1983-09-28 1983-09-28

Country Status (1)

Country Link
JP (1) JPH0527267B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480968A (en) * 1990-07-24 1992-03-13 Semiconductor Energy Lab Co Ltd Insulated-gate field-effect semiconductor device
JP2010232631A (en) * 2009-12-10 2010-10-14 Unisantis Electronics Japan Ltd Semiconductor device and method for manufacturing the same
JP2011061181A (en) * 2009-08-11 2011-03-24 Unisantis Electronics Japan Ltd Semiconductor device and method of manufacturing the same
EP2306507A2 (en) * 2009-10-01 2011-04-06 Unisantis Electronics (Japan) Ltd. Semiconductor device
JP2011086900A (en) * 2009-09-16 2011-04-28 Unisantis Electronics Japan Ltd Semiconductor device
US8319293B2 (en) 2009-03-25 2012-11-27 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP2013012765A (en) * 2012-08-29 2013-01-17 Unisantis Electronics Singapore Pte Ltd Semiconductor device
JP2013058773A (en) * 2012-10-26 2013-03-28 Unisantis Electronics Singapore Pte Ltd Semiconductor device
US8772881B2 (en) 2009-06-05 2014-07-08 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
JP2014140053A (en) * 2014-02-27 2014-07-31 Unisantis Electronics Singapore Pte Ltd Semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378183A (en) * 1976-12-22 1978-07-11 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5574174A (en) * 1978-11-30 1980-06-04 Toshiba Corp Interpolation type insulating gate field effect transistor
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JPS5840852A (en) * 1981-09-03 1983-03-09 Toshiba Corp Complementary metal oxide semiconductor device and its manufacture
JPS5874067A (en) * 1981-10-29 1983-05-04 Semiconductor Energy Lab Co Ltd Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378183A (en) * 1976-12-22 1978-07-11 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5574174A (en) * 1978-11-30 1980-06-04 Toshiba Corp Interpolation type insulating gate field effect transistor
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JPS5840852A (en) * 1981-09-03 1983-03-09 Toshiba Corp Complementary metal oxide semiconductor device and its manufacture
JPS5874067A (en) * 1981-10-29 1983-05-04 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480968A (en) * 1990-07-24 1992-03-13 Semiconductor Energy Lab Co Ltd Insulated-gate field-effect semiconductor device
US8642426B2 (en) 2009-03-25 2014-02-04 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8319293B2 (en) 2009-03-25 2012-11-27 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8772881B2 (en) 2009-06-05 2014-07-08 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
US9484268B2 (en) 2009-08-11 2016-11-01 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
JP2011061181A (en) * 2009-08-11 2011-03-24 Unisantis Electronics Japan Ltd Semiconductor device and method of manufacturing the same
US9059309B2 (en) 2009-08-11 2015-06-16 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US8558317B2 (en) 2009-08-11 2013-10-15 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US8441066B2 (en) 2009-09-16 2013-05-14 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
JP2011086900A (en) * 2009-09-16 2011-04-28 Unisantis Electronics Japan Ltd Semiconductor device
KR101203433B1 (en) * 2009-10-01 2012-11-23 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 Semiconductor device
EP2306507A3 (en) * 2009-10-01 2012-06-13 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
EP2306507A2 (en) * 2009-10-01 2011-04-06 Unisantis Electronics (Japan) Ltd. Semiconductor device
CN102034872A (en) * 2009-10-01 2011-04-27 日本优尼山帝斯电子株式会社 Semiconductor device
JP2011077437A (en) * 2009-10-01 2011-04-14 Unisantis Electronics Japan Ltd Semiconductor device
JP2010232631A (en) * 2009-12-10 2010-10-14 Unisantis Electronics Japan Ltd Semiconductor device and method for manufacturing the same
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9478545B2 (en) 2011-12-19 2016-10-25 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9245889B2 (en) 2011-12-19 2016-01-26 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9362353B2 (en) 2011-12-19 2016-06-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT
JP2013012765A (en) * 2012-08-29 2013-01-17 Unisantis Electronics Singapore Pte Ltd Semiconductor device
JP2013058773A (en) * 2012-10-26 2013-03-28 Unisantis Electronics Singapore Pte Ltd Semiconductor device
JP2014140053A (en) * 2014-02-27 2014-07-31 Unisantis Electronics Singapore Pte Ltd Semiconductor device

Also Published As

Publication number Publication date Type
JPH0527267B2 (en) 1993-04-20 grant

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