JPS54140485A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54140485A
JPS54140485A JP4776378A JP4776378A JPS54140485A JP S54140485 A JPS54140485 A JP S54140485A JP 4776378 A JP4776378 A JP 4776378A JP 4776378 A JP4776378 A JP 4776378A JP S54140485 A JPS54140485 A JP S54140485A
Authority
JP
Japan
Prior art keywords
film
crystal
poly
size
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4776378A
Other languages
Japanese (ja)
Other versions
JPS6028141B2 (en
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4776378A priority Critical patent/JPS6028141B2/en
Priority to US06/030,812 priority patent/US4239559A/en
Priority to DE19792916098 priority patent/DE2916098A1/en
Publication of JPS54140485A publication Critical patent/JPS54140485A/en
Publication of JPS6028141B2 publication Critical patent/JPS6028141B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a micropattern in a high precision by prescribing the size of the poly-crystal Si film of the 2nd layer provided on the 1st layer poly-crystal Si film by the lateral diffusion length of the impurity given from the 1st layer Si film.
CONSTITUTION: SiO2 film 2 is coated on Si substrate 1 to which the PN junction and others are provided, and then poly-crystal Si film 3 is grown on film 2 with the N-type inpurity doped there plus the conducting property given. After this, film 3 is turned to fixed shape 3a through etching. Then the entire surface including shape 3a is covered again with poly-crystal Si film 4, and the impurities are diffused from film 3a to grow film 4a containing the impurities to film 4 on film 3a. In this case, if size l of film 3a is set to a fixed value, lateral diffusion length d of the impurity can prescribe the size L of film 4a. In other words, size L can be decided by the heating terms and the type of the impurity.
COPYRIGHT: (C)1979,JPO&Japio
JP4776378A 1978-04-21 1978-04-24 Manufacturing method for semiconductor devices Expired JPS6028141B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4776378A JPS6028141B2 (en) 1978-04-24 1978-04-24 Manufacturing method for semiconductor devices
US06/030,812 US4239559A (en) 1978-04-21 1979-04-17 Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
DE19792916098 DE2916098A1 (en) 1978-04-21 1979-04-20 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4776378A JPS6028141B2 (en) 1978-04-24 1978-04-24 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS54140485A true JPS54140485A (en) 1979-10-31
JPS6028141B2 JPS6028141B2 (en) 1985-07-03

Family

ID=12784401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4776378A Expired JPS6028141B2 (en) 1978-04-21 1978-04-24 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6028141B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100451A (en) * 1981-12-10 1983-06-15 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61187835U (en) * 1985-05-14 1986-11-22
JPS63200036U (en) * 1988-05-30 1988-12-22
JPH04134334U (en) * 1991-05-30 1992-12-14 株式会社イナツクス Dry construction structure of plate-shaped building materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100451A (en) * 1981-12-10 1983-06-15 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6028141B2 (en) 1985-07-03

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