JPS54140485A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54140485A JPS54140485A JP4776378A JP4776378A JPS54140485A JP S54140485 A JPS54140485 A JP S54140485A JP 4776378 A JP4776378 A JP 4776378A JP 4776378 A JP4776378 A JP 4776378A JP S54140485 A JPS54140485 A JP S54140485A
- Authority
- JP
- Japan
- Prior art keywords
- film
- crystal
- poly
- size
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To obtain a micropattern in a high precision by prescribing the size of the poly-crystal Si film of the 2nd layer provided on the 1st layer poly-crystal Si film by the lateral diffusion length of the impurity given from the 1st layer Si film.
CONSTITUTION: SiO2 film 2 is coated on Si substrate 1 to which the PN junction and others are provided, and then poly-crystal Si film 3 is grown on film 2 with the N-type inpurity doped there plus the conducting property given. After this, film 3 is turned to fixed shape 3a through etching. Then the entire surface including shape 3a is covered again with poly-crystal Si film 4, and the impurities are diffused from film 3a to grow film 4a containing the impurities to film 4 on film 3a. In this case, if size l of film 3a is set to a fixed value, lateral diffusion length d of the impurity can prescribe the size L of film 4a. In other words, size L can be decided by the heating terms and the type of the impurity.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4776378A JPS6028141B2 (en) | 1978-04-24 | 1978-04-24 | Manufacturing method for semiconductor devices |
US06/030,812 US4239559A (en) | 1978-04-21 | 1979-04-17 | Method for fabricating a semiconductor device by controlled diffusion between adjacent layers |
DE19792916098 DE2916098A1 (en) | 1978-04-21 | 1979-04-20 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4776378A JPS6028141B2 (en) | 1978-04-24 | 1978-04-24 | Manufacturing method for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54140485A true JPS54140485A (en) | 1979-10-31 |
JPS6028141B2 JPS6028141B2 (en) | 1985-07-03 |
Family
ID=12784401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4776378A Expired JPS6028141B2 (en) | 1978-04-21 | 1978-04-24 | Manufacturing method for semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6028141B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100451A (en) * | 1981-12-10 | 1983-06-15 | Oki Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61187835U (en) * | 1985-05-14 | 1986-11-22 | ||
JPS63200036U (en) * | 1988-05-30 | 1988-12-22 | ||
JPH04134334U (en) * | 1991-05-30 | 1992-12-14 | 株式会社イナツクス | Dry construction structure of plate-shaped building materials |
-
1978
- 1978-04-24 JP JP4776378A patent/JPS6028141B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100451A (en) * | 1981-12-10 | 1983-06-15 | Oki Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6028141B2 (en) | 1985-07-03 |
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