JPS54127279A - Impurity diffusing method - Google Patents

Impurity diffusing method

Info

Publication number
JPS54127279A
JPS54127279A JP3516278A JP3516278A JPS54127279A JP S54127279 A JPS54127279 A JP S54127279A JP 3516278 A JP3516278 A JP 3516278A JP 3516278 A JP3516278 A JP 3516278A JP S54127279 A JPS54127279 A JP S54127279A
Authority
JP
Japan
Prior art keywords
film
phosphorus
layer
diffusion
ninp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3516278A
Other languages
Japanese (ja)
Other versions
JPS5837976B2 (en
Inventor
Yoshiharu Horikoshi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP53035162A priority Critical patent/JPS5837976B2/en
Publication of JPS54127279A publication Critical patent/JPS54127279A/en
Publication of JPS5837976B2 publication Critical patent/JPS5837976B2/en
Expired legal-status Critical Current

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Abstract

PURPOSE: To prevent damage caused by phosphorus vaporing onto a substrate surface, by forming a self-oxide film on the semiconductor surface at the time of local diffusion of phosphorus to the surface of the semiconductor containing phosphorus.
CONSTITUTION: On a semiconductor containing phosphorous such as one composed of nInP substrate 1, nInP layer 2, InGaAsP layer 3, and pInP layer 4, self- oxidie film 9 is formed and then, SiO2 film 5 is also formed outside of it. Then, SiO2 film 5 in the region requiring diffusion is removed by photoetching to make notch grooves 6. Next, impurities are heat-diffused through those notch groove 6, thereby forming diffusion parts 7.
COPYRIGHT: (C)1979,JPO&Japio
JP53035162A 1978-03-27 1978-03-27 Impurity diffusion method Expired JPS5837976B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53035162A JPS5837976B2 (en) 1978-03-27 1978-03-27 Impurity diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53035162A JPS5837976B2 (en) 1978-03-27 1978-03-27 Impurity diffusion method

Publications (2)

Publication Number Publication Date
JPS54127279A true JPS54127279A (en) 1979-10-03
JPS5837976B2 JPS5837976B2 (en) 1983-08-19

Family

ID=12434171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53035162A Expired JPS5837976B2 (en) 1978-03-27 1978-03-27 Impurity diffusion method

Country Status (1)

Country Link
JP (1) JPS5837976B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481381A (en) * 1987-09-24 1989-03-27 Toshiba Corp Manufacture of semiconductor device
CN108538930A (en) * 2017-03-03 2018-09-14 博尔博公司 Photodetector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481381A (en) * 1987-09-24 1989-03-27 Toshiba Corp Manufacture of semiconductor device
CN108538930A (en) * 2017-03-03 2018-09-14 博尔博公司 Photodetector
CN108538930B (en) * 2017-03-03 2021-07-27 博尔博公司 Photoelectric detector

Also Published As

Publication number Publication date
JPS5837976B2 (en) 1983-08-19

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