JPS54127279A - Impurity diffusing method - Google Patents
Impurity diffusing methodInfo
- Publication number
- JPS54127279A JPS54127279A JP3516278A JP3516278A JPS54127279A JP S54127279 A JPS54127279 A JP S54127279A JP 3516278 A JP3516278 A JP 3516278A JP 3516278 A JP3516278 A JP 3516278A JP S54127279 A JPS54127279 A JP S54127279A
- Authority
- JP
- Japan
- Prior art keywords
- film
- phosphorus
- layer
- diffusion
- ninp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To prevent damage caused by phosphorus vaporing onto a substrate surface, by forming a self-oxide film on the semiconductor surface at the time of local diffusion of phosphorus to the surface of the semiconductor containing phosphorus.
CONSTITUTION: On a semiconductor containing phosphorous such as one composed of nInP substrate 1, nInP layer 2, InGaAsP layer 3, and pInP layer 4, self- oxidie film 9 is formed and then, SiO2 film 5 is also formed outside of it. Then, SiO2 film 5 in the region requiring diffusion is removed by photoetching to make notch grooves 6. Next, impurities are heat-diffused through those notch groove 6, thereby forming diffusion parts 7.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53035162A JPS5837976B2 (en) | 1978-03-27 | 1978-03-27 | Impurity diffusion method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53035162A JPS5837976B2 (en) | 1978-03-27 | 1978-03-27 | Impurity diffusion method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54127279A true JPS54127279A (en) | 1979-10-03 |
JPS5837976B2 JPS5837976B2 (en) | 1983-08-19 |
Family
ID=12434171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53035162A Expired JPS5837976B2 (en) | 1978-03-27 | 1978-03-27 | Impurity diffusion method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5837976B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6481381A (en) * | 1987-09-24 | 1989-03-27 | Toshiba Corp | Manufacture of semiconductor device |
CN108538930A (en) * | 2017-03-03 | 2018-09-14 | 博尔博公司 | Photodetector |
-
1978
- 1978-03-27 JP JP53035162A patent/JPS5837976B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6481381A (en) * | 1987-09-24 | 1989-03-27 | Toshiba Corp | Manufacture of semiconductor device |
CN108538930A (en) * | 2017-03-03 | 2018-09-14 | 博尔博公司 | Photodetector |
CN108538930B (en) * | 2017-03-03 | 2021-07-27 | 博尔博公司 | Photoelectric detector |
Also Published As
Publication number | Publication date |
---|---|
JPS5837976B2 (en) | 1983-08-19 |
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