JPS5330284A - Production of substrate for semiconductor integrated circuits - Google Patents

Production of substrate for semiconductor integrated circuits

Info

Publication number
JPS5330284A
JPS5330284A JP10367276A JP10367276A JPS5330284A JP S5330284 A JPS5330284 A JP S5330284A JP 10367276 A JP10367276 A JP 10367276A JP 10367276 A JP10367276 A JP 10367276A JP S5330284 A JPS5330284 A JP S5330284A
Authority
JP
Japan
Prior art keywords
substrate
production
integrated circuits
semiconductor integrated
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10367276A
Other languages
Japanese (ja)
Inventor
Junichiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10367276A priority Critical patent/JPS5330284A/en
Publication of JPS5330284A publication Critical patent/JPS5330284A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a substrate inlaid with single crystal island regions in its polycrystalline supporting layer by laminating a single crystal substrate and a supporting substrate by using a BSG or PSG film, forming isolating grooves in the semiconductor substrate, then growing a polycrystalling semiconductor supporting layer through a dielectric substance film and etching off the glass.
COPYRIGHT: (C)1978,JPO&Japio
JP10367276A 1976-09-01 1976-09-01 Production of substrate for semiconductor integrated circuits Pending JPS5330284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10367276A JPS5330284A (en) 1976-09-01 1976-09-01 Production of substrate for semiconductor integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10367276A JPS5330284A (en) 1976-09-01 1976-09-01 Production of substrate for semiconductor integrated circuits

Publications (1)

Publication Number Publication Date
JPS5330284A true JPS5330284A (en) 1978-03-22

Family

ID=14360272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10367276A Pending JPS5330284A (en) 1976-09-01 1976-09-01 Production of substrate for semiconductor integrated circuits

Country Status (1)

Country Link
JP (1) JPS5330284A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US5032544A (en) * 1989-08-17 1991-07-16 Shin-Etsu Handotai Co., Ltd. Process for producing semiconductor device substrate using polishing guard
US5081061A (en) * 1990-02-23 1992-01-14 Harris Corporation Manufacturing ultra-thin dielectrically isolated wafers
US5231045A (en) * 1988-12-08 1993-07-27 Fujitsu Limited Method of producing semiconductor-on-insulator structure by besol process with charged insulating layers
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US5231045A (en) * 1988-12-08 1993-07-27 Fujitsu Limited Method of producing semiconductor-on-insulator structure by besol process with charged insulating layers
US5032544A (en) * 1989-08-17 1991-07-16 Shin-Etsu Handotai Co., Ltd. Process for producing semiconductor device substrate using polishing guard
US5081061A (en) * 1990-02-23 1992-01-14 Harris Corporation Manufacturing ultra-thin dielectrically isolated wafers
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors

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